Wooree Lst Co. Ltd.

Wooree E&l Co., Ltd.

Jae-Eung Oh

Bun-Hei Koo

Young-Kyun Noh

Youngkyn Noh

There is provided a light emitting device using a compound semiconductor, which can improve electrical characteristics and internal quantum efficiency by maximizing the recombination rate of electrons and holes in an active layer. The light emitting device using a compound semiconductor includes a substrate; a compound semiconductor layer formed on the substrate, the compound semiconductor layer comprising an active layer; and a current spreading layer formed on at least one of the top and bottom surfaces of the active layer, the current spreading layer allowing electrons or holes to be uniformly spread into the active layer.

Light emitting device using compound semiconductor

The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to nunit layers (n is a natural number equal to or greater than three) having different energy bandgaps are sequentially stacked and has an asymmetric energy band diagram.

Light-emitting device using clad layer consisting of asymmetrical units

The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a buffer layer and a nitride semiconductor. The method for fabricating the nitride semiconductor light emitting device using the hybrid buffer layer includes a first step of forming an AlGaN(0&#x2266;x&#x3c;1) layer on a substrate, a second step of forming a three-dimensional crystal seed layer made of a material included in a general formula of AlGaN(0&#x2266;x&#x3c;1) and AlONon the substrate by recrystallizing the substrate with the AlGaN(0&#x2266;x&#x3c;1) layer thereon, and a third step of forming an AlN nanostructure by annealing the substrate subjected to the second step at NHgas atmosphere, thus forming a hybrid buffer layer composed of the three-dimensional crystal seed layer and the AlN nanostructure on the substrate.

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Kyunggy, South Korea

Jae-Eung Oh