Electronics and Telecommunications Research Institute

Mvtech

Korea Advanced Institute of Science and Technology

Konkuk University Industrial Cooperation Corp

Jae-Eun Pi

Chi-Sun Hwang

Seung Youl Kang

Jaehyun Moon

Jong-Heon Yang

Yong Hae Kim

Chul Woong Joo

Seong-Mok Cho

Ji Hun Choi

Sung Haeng Cho

Chan Woo Park

Seongdeok Ahn

Jeho Na

Gi Heon Kim

Young Sam Park

Ji-Young Oh

Chunwon Byun

Min Ki Ryu

Himchan Oh

Sooji Nam

Hee-ok Kim

Hye Yong Chu

Jeong Ik Lee

Sang Hoon Cheon

Joo Yeon Kim

Tae-Youb Kim

Byoung-Hwa Kwon

Su Jae Lee

Byung-Do Yang

Kyunghee Choi

Jae-Min Kim

OhSang Kwon

Jong Woo Kim

Byoung Gon Yu

Kyoung Ik Cho

Doo-Hee Cho

Nam Sung Cho

Won Jae Lee

Sang Chul Lim

Hyunkoo Lee

Kee-Chan Park

Jongchan Lee

Seunghee Lee

Sang-Hee Park

Joondong Kim

Sangyeon Kim

HongKyun Lym

Yeon Kyung Kim

SangHee Park

KwangHeum Lee

Jihun Choi

Ha Kyun Lee

Hakyun Lee

Eunsuk Park

Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

CMOS logic element including oxide semiconductor

Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Stretchable electronics and method for manufacturing the same

Provided is an operation method for a digital hologram implementation device including a backlight and a spatial light modulator, the operation method including setting an initial phase value of an optical signal to a remedy phase, computing a reduced phase based on the remedy phase, correcting the remedy phase based on a difference between the reduced phase and a preset optimized phase, determining whether the corrected remedy phase is a stabilized phase, performing forward propagation on the stabilized phase and an amplitude of the optical signal, correcting the amplitude of the optical signal, performing backward propagation on the corrected amplitude and the stabilized phase, and determining whether a phase derived by the backward propagation is an optimized phase.

Operation method for digital hologram implementation device

A vertical channel thin film transistor includes substrate, lower source/drain electrode, spacer layer, upper source/drain electrode covering portion of upper surface of the spacer layer, interlayer insulating pattern covering portion of upper surface of the upper source/drain electrode and upper surface of the spacer layer exposed by the upper source/drain electrode, contact hole disposed on the lower source/drain electrode and passing through the interlayer insulating pattern, the upper source/drain electrode, and the spacer layer, active pattern covering inner wall and bottom surface of the contact hole and extending over upper surface of the upper source/drain electrode and upper surface of the interlayer insulating pattern, gate insulating pattern filling portion of the contact hole and extending along upper surface of the active pattern, and gate electrode filling portion of the contact hole and extending along upper surface of the gate insulating pattern.

Vertical channel thin film transistor and method for manufacturing the same

An apparatus which analyses a depth of a holographic image is provided. The apparatus includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.

Apparatus for analyzing depth of holographic image and analyzing method thereof

Provided is a static random-access memory (SRAM) device. The SRAM device includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes a first NMOS area and a second NMOS area vertically separated from the PMOS area with the first NMOS area therebetween, a first transistor including a first gate electrode disposed on the PMOS area, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, a second transistor including a second gate electrode disposed in the first NMOS area and a second channel vertically overlapping the second gate electrode, and a third transistor including a third gate electrode disposed in the second NMOS area and a third channel vertically overlapping the third gate electrode, wherein the first channel includes silicon, wherein the second channel and the third channel include an oxide semiconductor.

SRAM device including oxide semiconductor

Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Semiconductor device, display panel, and display device including the same

Provided is a stretchable display device. The stretchable display device includes a substrate and a base pattern on the substrate, wherein the base pattern comprises a first portion, a second portion, and a connection portion configured to connect the first portion to the second portion. The stretchable display device includes a lower electrode on the first portion of the base pattern; an upper electrode on the lower electrode, a light emitting structure between the lower electrode and the upper electrode, and a protective layer configured to cover top and side surfaces of the upper electrode, side surfaces of the light emitting structure, a side surface of the lower electrode, and a portion of a side surface of the base pattern. The upper electrode extends to a top surface of the connection portion and a top surface of the second portion of the base pattern, and the first portion and the second portion of the base pattern extend in a first direction parallel to a top surface of the substrate. The first portion and the second portion are parallel to the top surface of the substrate and are spaced apart from each other in a second direction crossing the first direction. The connection portion extends in the second direction. A level of the lowermost surface of the protective layer is disposed between a bottom surface of the lower electrode and a bottom surface of the base pattern.

Stretchable display device

Disclosed are a biometric device and a biometric system including the same. The device includes a biogenic-synthesized film, a reflective layer disposed on one side of the biogenic-synthesized film, a light source disposed on the reflective layer to generate light, a beam splitter disposed between the light source and the reflective layer to provide the light to the reflective layer and another side of the biogenic-synthesized film, and a light switching layer disposed between the beam splitter and the reflective layer to switch the light provided to the reflective layer.

Biometric device and biometric system including the same

Provided is a pressure sensitive display device including a sensing substrate, a reaction substrate provided on the sensing substrate, and spacers provided between the sensing substrate and the reaction substrate to space the sensing substrate apart from the reaction substrate. Here, the sensing substrate includes a flexible substrate and a touch electrode provided on one surface of the flexible substrate, which faces the reaction substrate. The reaction substrate includes a transparent substrate, a transparent electrode provided on one surface of the transparent substrate, which faces the sensing substrate, and a light emitting layer disposed on the transparent electrode.

Pressure sensitive display device having touch electrode and light emitting layer

A hologram display device includes a light source unit that emits light, a spatial light modulator that modulates the light emitted from the light source unit, and a random pinhole panel. The random pinhole panel includes a plurality of pinholes of a random position or a random size and is arranged in line with an output part of the spatial light modulator. In the hologram display device and the method of manufacturing the hologram display device, a position and size of a random pinhole on the random pinhole are not limited to inside each pixel of the spatial light modulator.

Hologram display device and method for manufacturing the same

Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.

Complex biometric sensor including color conversion layer

Provided is a thin film transistor including a substrate, a first spacer on the substrate, a second spacer on the first spacer, a light shield layer intervened between the first spacer and the second spacer, a semiconductor layer on the second spacer, and a gate electrode on the semiconductor layer, wherein the light shield layer includes a plurality of inclined surfaces against a top surface of the substrate.

Thin film transistor having light shielding structure

Provided is a light modulating device including a light modulating unit provided on a substrate, a driving unit electrically connected to the light modulating unit and configured to drive the light modulating unit, and a cover disposed on the light modulating unit and configured to seal the light modulating unit, wherein the light modulating unit comprises an electrochromic device.

Light modulation device

Provided is a fingerprint sensor. The fingerprint sensor according to an embodiment of the inventive concept includes a plurality of transmission lines, a plurality of receive lines, and a sensor array including sensor units connected to the plurality of transmission lines. Each of the sensor units includes a switch transistor having a gate terminal and one terminal, which are commonly connected to a corresponding transmission line of the plurality of transmission lines and a sensor transistor connected between the other end of the switch transistor and a corresponding receive line of the plurality of receive lines. The sensor transistor performs a current suppression on in response to a voltage of a virtual gate that is touched by a fingerprint.

Fingerprint sensor and electronic device having the same

Growing community of inventors

Daejeon, South Korea

Jae-Eun Pi