Lg Philips Lcd Co., Inc.

Lg Electronics Inc.

Lg Display Co., Ltd.

Jae-Deok Park

Yong-Min Ha

Sang-Hun Oh

Hun Jeoung

Yong Min Ha

Ju-Cheon Yeo

Soon-Kwang Hong

Byeong-Koo Kim

Kee-Jong Kim

A transflective liquid crystal display device includes a first substrate including transmissive and reflective pixels. Gate and data lines on the first substrate cross each other to define a pixel region, with a thin film transistor at each crossing. The transmissive and reflective pixels correspond to respective pixel regions. A first passivation layer covers the thin film transistor and has a transmissive hole in the transmissive pixel. A first reflector is disposed on the first passivation layer in the reflective pixel. A second passivation layer is disposed on the first reflector and in the transmissive hole. A pixel electrode on the second passivation layer is connected to the thin film transistor. A second substrate opposing the first substrate has a color filter layer on an inner surface thereof. The color filter layer contains R, G and B sub color filters, which each correspond to a pixel region.

Liquid crystal display device and method of fabricating the same

A transflective liquid crystal display includes gate and data lines perpendicular to each other and defining a plurality of unit pixels. Each unit pixel includes a plurality of sub-pixel regions, which each have a transmissive portions and a reflective portion. The transmissive portions are gathered together within each unit pixel at corners of the sub-pixel regions opposing corners in which thin film transistors near the crossings of the gate and data lines are disposed. A passivation layer covering the thin film transistors and the gate and data lines has an opening that corresponds to the transmissive portions in the unit pixel. A reflector is formed over the passivation layer in each sub-pixel region and corresponds in position to the reflective portion. A pixel electrode in each sub-pixel region contacts the thin film transistor through a contact hole in the passivation layer.

Transflective liquid crystal display and method of fabricating the same

Transflective liquid crystal display device

A system for reducing an OFF-current in a thin film transistor of a liquid crystal display device includes gate and data lines crossing each other, a pixel thin film transistor including gate, source and drain electrodes, the gate electrode connected to the gate line and the source electrode connected to the data line, a liquid crystal capacitor connected to the drain electrode of the pixel thin film transistor, a first switch thin film transistor connected to a first end of the data line, a second switch thin film transistor connected to a first end of the gate line, a first voltage source electrically connected to the drain electrode of the pixel thin film transistor, a second voltage source connected to a source electrode of the first switch thin film transistor, a third voltage source connected to gate electrodes of the first and second switch thin film transistors, and a fourth voltage source connected to a source electrode of the second switch thin film transistor.

System and method for reducing off-current in thin film transistor of liquid crystal display device

An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a buffer layer on a substrate; forming a polycrystalline-silicon active layer on the buffer layer, the said active layer having an island shape; forming a gate insulation layer on the buffer layer to cover the polycrystalline-silicon active layer; forming a first metal layer on the gate insulation layer; forming a second metal layer on the first metal layer; patterning the first and second metal layer to form a gate electrode, a gate line and a gate shorting bar; forming a source contact area and a drain contact area at both sides of the polycrystalline-silicon active layer; forming an interlayer insulator on the gate insulation layer to cover the patterned first and second metal layers; patterning the interlayer insulator and the gate insulation layer so as to form a first contact hole to the source contact area and the second contact hole to a drain contact area, patterning a portion of the interlayer insulator on the gate shorting bar so as to form an etching hole, eliminating a portion of the first layer of the gate insulation layer under the etching hole, and forming a bridge portion in the second layer of the gate insulation layer under the etching hole; forming a third metal layer on the gate insulation layer and on the bridge portion; patterning the third metal layer so as to form a source electrode and a drain electrode, and removing the bridge portion when patterning the third metal layer; and forming a passivation layer on the interlayer insulator and on the patterned third metal layer.

Array substrate for a liquid crystal display

Array substrate for a liquid crystal display and method for fabricating thereof

An array substrate for a transflective liquid crystal display device includes a substrate; a thin film transistor on the substrate, the thin film transistor including an active layer, a gate electrode, a source electrode and a drain electrode; a gate line connected to the gate electrode; a data line connected to the source electrode, the data line defining a pixel region with the gate line; an active extension portion extending from the active layer to the pixel region, a first insulating layer on the active extension portion; a storage electrode on the first insulating layer over the active extension portion; a second insulating layer on the storage electrode; a reflective plate on the second insulating layer over the storage electrode, the reflective plate extending over one end of the data line and connected to an adjacent reflective plate; a third insulating layer on the reflective plate; and a pixel electrode on the third insulating layer, the pixel electrode extending over one end of the data line and connected to the drain electrode.

Array substrate for a liquid crystal display device and a manufacturing method thereof

A method of forming a thin film transistor, includes: forming an active region on a first insulating layer, the active region having a channel region, at least one sub-channel region, and first regions disposed between the channel region and each sub-channel region; sequentially forming a second insulating layer and a first conductive layer over the first insulating layer; patterning the second insulating layer and the first conductive layer to form a gate insulating layer and gate electrode on a channel region of the active layer, and to form a sub-gate insulating layer and associated sub-gate electrode on each sub-channel region of the active layer; forming a mask covering at least a portion of the gate electrode, at least a portion of each sub-gate electrode, and each first region of the active region; and implanting impurities into exposed portions of the active region using the mask to form a source region on a first side of the channel region and a drain region on a second side of the channel region such that each sub-gate region is disposed between the channel region and one of the drain region and the source region.

Thin film transistor and a method of forming the same

The thin film transistor includes an insulating substrate, and an active region formed on the insulating substrate. The active region includes a channel region, a source region formed on a first side of the channel region, a drain region formed on a second side of the channel region, a sub-channel region formed between the channel region and at least one of the source region and the drain region, and a first region formed between the channel region and each sub-channel region. The thin film transistor also includes an insulating layer formed on the channel region and each sub-channel region, a gate electrode formed on the insulating layer over the channel region, and a sub-gate electrode formed on the insulating layer over each sub-channel region. When impurities are implanted therein, the first region forms a lightly doped region; otherwise, each first region forms an offset region. During the doping of the source and drain regions with high concentration impurity ions, an implantation mask is formed over at least a portion of the gate electrode, at least a portion of each sub-gate electrode, and each first region. Accordingly, the width of each sub-gate electrode provides a margin of error when aligning the deposition of the mask.

A thin film transistor (TFT) has lightly doped drains which includes heavily doped regions and lightly doped regions. The lightly doped drains are formed simultaneously by a single doping process through a gate insulating layer having different thicknesses. The TFT is fabricated by forming an active layer on an insulated substrate, forming an insulating layer on the active layer, forming a conductive layer on the insulating layer, forming a photoresist pattern on the conductive layer, forming a gate electrode by over etching the conductive layer by using the photoresist pattern as a mask. The first insulating layer is then partially etched by using the photoresist pattern as a mask. As a result, the portions of the first insulating layer overlapped by the photoresist pattern is thicker than the other portions not overlapped by the photoresist pattern. When the entire TFT is induced to impurities, the active regions substantial below the thicker insulating region form the lightly doped drains.

Thin film transistor and method of fabricating thereof

The present invention discloses a liquid crystal display device including a first insulating substrate having: a) a buffer layer formed on the first substrate; b) an inter-layer insulating film formed on the buffer layer, the inter-layer insulating film having an etching portion, the etching portion is etched; c) a semiconductor island formed on a portion of the buffer layer corresponding to the etching portion; d) data lines formed on the semiconductor island; e) gate lines arranged in a direction perpendicular to the data lines; f) switching elements arranged near cross points of the gate and data lines, each of the switching element having a gate electrode, a source electrode and a drain electrode, the gate electrode extending from the gate line, the source electrode extending from the data line; and g) pixel electrodes formed on a region defined by the gate and data lines, the pixel electrode connecting with the drain electrode, the pixel electrode overlapping an end portion of the data line, the adjacent two pixel electrodes spaced apart from each other; a second insulating substrate having a color filter; and a liquid crystal layer interposed between the first and second insulating substrates.

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Gyeongsangbuk-do, South Korea

Jae-Deok Park