Samsung Electronics Co., Ltd.

Seagate Technology International

Jae-Chul Shim

Gwan-Hyeob Koh

Yoon-Jong Song

Jung-Hoon Bak

Myoung-Su Son

Kil-Ho Lee

Ki-seok Suh

Yong-Seok Chung

Hae-Jung Lee

In a method of manufacturing an MRAM device, a memory unit including a lower electrode, an MTJ structure and an upper electrode sequentially stacked is formed on a substrate. A protective layer structure including a capping layer, a sacrificial layer and an etch stop layer sequentially stacked is formed on the substrate to cover the memory unit. An insulating interlayer is formed on the protective layer structure. The insulating interlayer is formed to form an opening exposing the protective layer structure. The exposed protective layer structure is partially removed to expose the upper electrode. A wiring is formed on the exposed upper electrode to fill the opening.

Magnetoresistive random access memory device and method of manufacturing the same

A method of manufacturing an MRAM device includes sequentially forming a first insulating interlayer and an etch-stop layer on a substrate. A lower electrode is formed through the etch-stop layer and the first insulating interlayer. An MTJ structure layer and an upper electrode are sequentially formed on the lower electrode and the etch-stop layer. The MTJ structure layer is patterned by a physical etching process using the upper electrode as an etching mask to form an MTJ structure at least partially contacting the lower electrode. The first insulating interlayer is protected by the etch-stop layer so not to be etched by the physical etching process.

Magnetoresistive random access memory device having magnetic tunnel junction and method of manufacturing the same

A data storage device determines a zone layout based on a quality evaluation factor. The zone layout is designed such that a measurement value of the quality evaluation factor for each track in each zone is within a range between a predetermined upper limit and a predetermined lower limit and a maximum amount of variation of the measurement value within each zone is substantially equal to a difference between the upper limit and the lower limit.

Method of setting zone layout of recording medium, and apparatus using method

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Hwaseong-si, South Korea

Jae-Chul Shim