Samsung Electronics Co., Ltd.

Samsung Electro-Mechanics Co., Ltd.

Jae Chul Ro

Jae Hoon Lee

Jung Hee Lee

Hyun Wook Shim

Suk Kil Yoon

Seung Wan Chae

Hyun Ick Cho

Geun Chang Ryo

Dae Kil Kim

There is provided a light emitting diode package, including a package body including a recess portion having a housing space and a lead frame mounted on the recess portion to be exposed; a light emitting diode chip mounted to be electrically connected to the lead frame; and a position indicator formed on the lead frame and guiding the mounting position of the light emitting diode chip.

Light emitting diode package

A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.

Method of manufacturing vertical gallium nitride based light emitting diode

The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInOlayer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.

Group III-nitride light emitting device

Growing community of inventors

Seoul, South Korea

Jae Chul Ro