Charm Engineering Co., Ltd.

Jae Chul Choi

Young Ki Han

Kyung Ho Lee

Kwan Goo Rha

Young Ho Seo

Yong Hwan Lim

Jung Hee Lee

Jun Hyeok Lee

Seng Hyun Chung

Hyoung Won Kim

Sun Q Jeon

Hee Se Lee

Jae Ho Guahk

Chi Kug Yoon

There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Apparatus for plasma processing and method for plasma processing

Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

Plasma processing apparatus and method for plasma processing

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Suwon-si, South Korea

Jae Chul Choi