Lg Innotek Co., Ltd.

Jae Cheon Han

Kwang Ki Choi

Sun Woo Park

Dong Hyun Sung

Dae Hee Lee

Byoung Woo Lee

Young Kyu Jeong

Jung Hyeok Bae

Da Jeong Song

Jung Myung Min

Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer which is disposed in a plurality of via holes passing through the light-emitting structure and second conductive layer and comprises a plurality of through electrodes electrically connected to the first semiconductor layer; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, second semiconductor layer, and second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the farther away the second conductive layer disposed between the plurality of through electrodes is from the electrode pad, the greater the width of the second conductive layer becomes.

Light-emitting element

Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.

A light emitting diode according to one embodiment comprises: a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are on the substrate; a first pad electrode part on the first conductive semiconductor layer; a current blocking layer on the second conductive semiconductor layer; a second electrode on the first conductive semiconductor layer and the current blocking layer; and a second pad electrode part on the second electrode, wherein the width of the current blocking layer can become thicker as the current blocking layer becomes closer to the first pad electrode part from the second pad electrode part.

Light emitting diode, light emitting diode package including same, and lighting system including same

A semiconductor light emitting device comprises a first electrode contacting layer, a first active layer on the first electrode contacting layer, a second electrode contacting layer on the first active layer, a second active layer on the second electrode contacting layer, and a third electrode contacting layer on the second active layer.

Semiconductor light emitting device and method of fabricating the same

A light emitting apparatus includes a first light source to generate light having a first main wavelength band, a second light source to generate light having a second main wavelength band, a first transparent layer surrounding the first and second light sources, a wavelength conversion layer disposed on the first transparent layer to convert at least one of the light having the first main wavelength band and the light having the second main wavelength band into light having a third main wavelength band, and a medium layer between the wavelength conversion layer and the first transparent layer. At least of the first or second light sources has a first refractive index, the first transparent layer has a second refractive index, the medium layer has a third refractive index, the wavelength conversion layer has a fourth refractive index, and the first to fourth refractive indexes are different from each other.

Light emitting apparatus using medium layer between wavelength conversion layer and transparent layer

Provided are a light emitting device and a light unit. The light emitting device includes a package body including a body, a plurality of electrodes on the body, and a concave portion on at least one of the plurality of electrodes, a light emitting chip including a convex portion corresponding to the concave portion to couple and attach the concave portion to the convex portion, the light emitting chip including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an adhesion layer on a bottom surface of the light emitting chip.

Light emitting device and light unit having improved electrode and chip structures with concave/convex shapes

Provided is a semiconductor light emitting device. The semiconductor light emitting device includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; an insulation layer on the second conductive semiconductor layer and including a first hole therein; a second electrode on the second conductive semiconductor layer; and a first electrode on the insulation layer and including a connection portion electrically connected to the first conductive semiconductor layer. The second electrode includes a plurality of line patterns. The connection portion of the first electrode is disposed between the plurality of line patterns of the second electrode and is disposed in the first hole of the insulation layer.

Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises a first conductive type substrate, first to fourth metal electrodes, and a light emitting diode. The first conductive type substrate comprises P-N junction first to fourth diodes. The first metal electrode is connected to the first diode and the fourth diode. The second metal electrode is connected to the third diode and the second diode. The third metal electrode is connected to the first diode and the third diode. The fourth metal electrode is connected to the second diode and the fourth diode. The light emitting diode is electrically connected to the third metal electrode and the fourth metal electrode.

Light emitting device and method of fabricating the same

Provided is a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a second electrode part on the second conductive semiconductor layer; an insulation layer on the second electrode part; and a first electrode part on the insulation layer, a portion of the first electrode part being electrically connected to the first conductive semiconductor layer.

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Seoul, South Korea

Jae Cheon Han