Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Dongjin Semichem Co., Ltd.

Hyundai Electronics Industries

Hyundai Electronics Inc. Co., Ltd.

Jae Chang Jung

Ki Ho Baik

Geun Su Lee

Min Ho Jung

Cheol Kyu Bok

Keun Kyu Kong

Ki Soo Shin

Cha Won Koh

Jin Soo Kim

Hyeong Soo Kim

Chi Hyeong Roh

Myoung Soo Kim

Chang Moon Lim

Sung Koo Lee

Seung Chan Moon

Sung Eun Hong

Hyoung Gi Kim

Hyung Gi Kim

Sam Young Kim

Young Sun Hwang

Young-Sik Kim

Jae Hyun Kim

Keun Do Ban

Ki Cheol Shin

Seung Hyun Moon

Ki-Soo Shin

Jin-soo Kim

Hee Youl Lim

Deog Bae Kim

Chang Il Choi

Ki Ho Balk

Hyang Gi Kim

Joo On Park

Gyu Dong Park

Myoung Ja Min

Se Jin Choi

A coating composition containing a coating base resin and a C-Calcohol as a main solvent, and a method for forming a fine contact of a semiconductor device including the steps of preparing the coating composition, forming a photoresist film on a semiconductor substrate having an underlying layer, performing exposure with a contact mask and developing processes to form a photoresist pattern for contact on the photoresist film, and coating the coating composition on the photoresist pattern to form a coating film.

Photoresist coating composition and method for forming fine contact of semiconductor device

A method for forming a fine pattern a semiconductor device includes the steps of forming a first photoresist pattern over a semiconductor substrate having an underlying layer; coating a pattern hardening coating agent over the first photoresist pattern, thereby forming a pattern hardening film; forming a second photoresist film over the resulting structure; and selectively exposing and developing the second photoresist film, thereby forming a second photoresist pattern to be defined between neighboring first photoresist pattern.

Method for forming a fine pattern in a semicondutor device

A method for manufacturing a fine pattern of a semiconductor device comprising: forming hard mask patterns having a thickness of tover an underlying layer; forming a light penetrable thin film having a thickness of tover the hard mask pattern; forming a light absorbable thin film over light penetrable thin film; performing an exposure process on the resulting structure without use of an exposure mask while controlling an amount of exposure energy such that an exposure light reaches a depth T measured from a top surface of the light penetrable thin film to a top surface of the underlying layer such that t&#x3c;T&#x2266;t+t; performing a developing process on the resulting structure to form an organic mask pattern between the hard mask patterns; and etching the underlying layer using the hard mask pattern and the organic mask pattern as an etching mask to form an underlying layer pattern.

Method for forming fine pattern of semiconductor device

A method for forming a fine pattern of a semiconductor device includes forming a photoresist pattern over a semiconductor substrate including an underlying layer. A cross-linking layer is formed on the sidewall of the photoresist pattern. The photoresist pattern is then removed to form a fine pattern comprising the cross-linking layer. The underlying layer is etched using the fine pattern as an etching mask. As a result, the underlying layer has a smaller size than a minimum pitch.

Method for forming a fine pattern of a semiconductor device

A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.

Method for manufacturing a semiconductor device

A method for forming a pattern of a semiconductor device using an immersion lithography process includes pretreating a top portion of the photoresist film with an alkane solvent or alcohol in the immersion lithography process to form a uniform over-coating film.

Disclosed herein is a method for manufacturing a semiconductor device that includes performing an Oplasma treatment step after forming a Si-containing anti-reflection film.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device using a photoresist polymer comprising a fluorine component, a photoresist composition containing the photoresist polymer and an organic solvent to reduce surface tension, by forming a photoresist film uniformly on the whole surface of an underlying layer pattern to allow a subsequent ion-implanting process to be stably performed.

A method for forming a fine pattern of a semiconductor device includes forming a first photoresist pattern over a semiconductor substrate including an underlying layer. A cross-linking layer is formed on the sidewall of the first photoresist pattern. The first photoresist pattern is removed to form a fine pattern including a silicon polymer. A second photoresist pattern is formed that is coupled to the fine pattern. The underlying layer is etched using the fine pattern and the second photoresist pattern as an etching mask. As a result, the fine pattern has a smaller size than a minimum pitch.

Method of forming fine pattern of semiconductor device

A composition for the organic hard mask includes a polyamic acid compound, and a method for forming a pattern is used in a manufacturing process of semiconductor devices by coating the composition for organic hard mask film on an underlying layer, and depositing a second hard mask film with a silicon nitride SiON film thereon to form a double hard mask film having an excellent etching selectivity, thereby obtaining a uniform pattern.

Method for forming a pattern on a semiconductor device using an organic hard mask

A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer for crosslinking is useful in an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.

Anti-reflective polymer, anti-reflective composition containing the same, and method for forming pattern using the same

A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.

A method for forming a fine pattern of a semiconductor device include forming a stack structure including a 1layer hard mask film to a nlayer hard mask film (n is an integer ranging from 2 or more) over an underlying layer formed over a semiconductor substrate. The nlayer hard mask film, the top layer, is selectively etched to obtain a first hard mask pattern of the nlayer. A second hard mask pattern of the nlayer is formed between the first hard mask patterns of the nlayer. A (n&#x2212;1)layer hard mask film is etched using the first and the second hard mask pattern of the nlayer as etching masks. The (c) step to the (d) step repeat to form the first and the second hard mask patterns of the 1layer over the underlying layer. And, the underlying layer is etched using the first and second hard mask patterns of the 1layer as etching masks.

A photoresist composition includes a base resin, a copolymer of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent, and is used for forming a fine (micro) pattern in a semiconductor device by double patterning. The invention method can markedly reduce the number of steps in etching and hard mask deposition processes, so that work hours and manufacturing costs may be reduced, contributing to an increase in yield of semiconductor devices.

Photoresist composition and method for forming pattern of a semiconductor device

A method for forming a fine pattern of a semiconductor device comprises the steps of: forming a first hard mask pattern having a width of Wand a thickness of Tover an underlying layer formed over a semiconductor substrate; forming a second hard mask film with a planar type over the resulting structure and planarizing the second hard mask s to expose the first hard mask pattern; removing the first hard mask pattern by a thickness Tfrom the top surface (0&#x3c;T&#x3c;T); performing a trimming process on the second hard mask film to form a second hard mask pattern having a slope side wall; performing a second trimming process on the second hard mask pattern to separate the second hard mask pattern from the first hard mask pattern and form a third hard mask pattern having a width of W; and patterning the underlying layer using the first hard mask pattern and the third hard mask pattern as etching masks.

Growing community of inventors

Kyoungki-do, South Korea

Jae Chang Jung