Skhynix Inc.

Jae Bum Ko

Sang Jin Byeon

Jong Chern Lee

Young Jun Ku

Jun Gi Choi

A memory device may include an application chip set including a plurality of applications. The memory device may include a chip decoder configured to select one application among the applications in response to input data and a test fuse signal, and output function data so that a function to be performed by the selected application is selected.

Memory device and memory system including the same

A semiconductor memory apparatus may include a refresh mode control circuit configured to enable a row address increase signal when all banks capable of being designated by a bank address in a refresh operation are all designated. The semiconductor memory apparatus may also include and a row address generation circuit configured to increase a value of a row address when the row address increase signal is enabled.

Semiconductor memory apparatus performing a refresh operation

A semiconductor apparatus includes an individual chip designating code setting block configured to generate a plurality of individual chip designating code of different values; an individual chip activation block configured to enable an individual chip activation signal among a plurality of individual chip activation signals, which corresponds to individual chip designating code, when the individual chip designating code matches the individual chip control code; and a control block configured to set the individual chip control code or output chip selection address as the individual chip control code in response to chip selection fuse signals and test fuse signals.

Semiconductor apparatus and chip selecting method thereof

A semiconductor apparatus may include an operation signal input selection block configured to output one of either a first operation signal or a second operation signal, as a select signal, in response to an operation select signal. The semiconductor apparatus may include a target code selection block configured to output one of either a first target code or a second target code, as a select code, in response to the operation select signal. The semiconductor apparatus may include an enable signal generation block configured to generate an enable signal when a time corresponding to the select code passes, in response to the select signal. The semiconductor apparatus may include an operation signal output selection block configured to output the enable signal, as one of either a third operation signal or a fourth operation signal, in response to the operation select signal.

Semiconductor apparatus

A semiconductor memory apparatus may include an active control portion configured to generate a preliminary bank active signal and a single bank refresh signal in response to a command, a refresh control signal, and a bank active signal. The semiconductor memory apparatus may also include a signal combination portion configured to enable the bank active signal when either the preliminary bank active signal or the single bank refresh signal is enabled.

Semiconductor memory apparatus

A semiconductor apparatus includes a control signal reception portion. The control signal reception portion may set information related to operation of a memory chip by receiving a command signal and an address signal from one among a stack chip test portion, a control signal interface portion and a test setting portion.

Stacked semiconductor apparatus and semiconductor system capable of inputting signals through various paths

A semiconductor apparatus includes a plurality of stack dies which are formed with a predetermined number of channels. The semiconductor apparatus also includes a base die configured to initialize a channel not electrically coupled with the stack dies.

3D semiconductor apparatus for initializing channels

A decoding circuit is disclosed, which relates to a technology for changing a decoding structure without changing a circuit structure. A decoding circuit for decoding N input signals to generate output signals corresponding to elements of 2binary information includes: a controller configured to generate control signals; a decoding unit configured to generate output signals by decoding the N input signals, wherein the number of output signals is controlled in response to the control signals; and a combination unit configured to output a first output signal by logically combining the output signals of the decoding unit.

Decoding circuit

A stacked semiconductor apparatus includes a plurality of chips which are stacked one upon the other. One chip of the plurality of chips may be configured to generate a plurality of refresh period signals for performing refresh operations within the plurality of chips, and may be configured to transmit the plurality of refresh period signals to the plurality of chips excluding the one chip. The plurality of chips may respectively receive refresh period signals allocated to them according to chip ID signals, and may perform the refresh operations.

Stacked semiconductor apparatus for generating refresh signal

A semiconductor integrated circuit includes a plurality of dies, wherein each of the dies is configured to enable a power circuit provided therein according to a power control signal, in a state in which the die was determined to be a good die or a fail die.

Semiconductor integrated circuit

A semiconductor apparatus may comprise: a first chip ID generation unit configured to receive an enable signal through a first through-silicon via and a clock signal through a second through-silicon via and generate a first chip ID signal and a delayed enable signal; a second chip ID generation unit configured to receive the delayed enable signal through a third through-silicon via from the first chip ID generation unit and the clock signal and generate a second chip ID signal; a first chip selection signal generation unit configured to receive the first chip ID signal and a main ID signal and generate a first chip selection signal; and a second chip selection signal generation unit configured to receive the second chip ID signal and the main ID signal and generate a second chip selection signal.

A semiconductor memory apparatus includes one or more semiconductor chips configured to have predetermined capacity and structure; and a signal level control unit configured to control levels of external signals, which are input to the one or more semiconductor chips, in order to realize various capacities and structures using the one or more semiconductor chips.

Semiconductor apparatus and memory system including the same

A command buffer circuit of a semiconductor apparatus includes a first buffer configured to receive a first command signal and generate a first command control signal, a second buffer configured to receive a second command signal and generate a second command control signal, a second block configured to select and output the first command control signal or the second command control signal in response to a rank control signal, and a control signal generation block configured to generate the rank control signal in response to a single rank signal and a chip select signal.

Command buffer circuit of semiconductor apparatus

An address delay circuit of a semiconductor memory apparatus includes a first group control pulse generation unit configured to generate a first control pulse after input of a first group column address strobe pulse and passage of a time corresponding to a first set multiple of one cycle of a clock, a second group control pulse generation unit configured to generate a second control pulse after input of a second group column strobe address pulse and passage of a time corresponding to a second set multiple of the one cycle of the clock, a first address storage unit configured to receive and store a first group external address in response to the first control pulse, and output a first group internal address, and a second address storage unit configured to receive and store a second group external address in response to the second control pulse, and output a second group internal address.

Address delay circuit of semiconductor memory apparatus

A precharge signal generation circuit of a semiconductor memory apparatus may comprise a read/write precharge command generation section configured to delay a precharge command by a first delay time set in response to a control signal to generate one of a read precharge command and a write precharge command; and a read/write bank precharge address generation section configured to delay a bank column address strobe signal by a second delay time set in response to the precharge command delayed in the read/write precharge command generation section, and generate one of a read bank precharge address and a write bank precharge address.

Growing community of inventors

Icheon-si, South Korea

Jae Bum Ko