Lg Philips Lcd Co., Inc.

Lg Electronics Inc.

Lg Display Co., Ltd.

Jae Beom Choi

Ki Hyuk Yoon

Byung Duck Song

Young Jin Oh

Byung Chul Ahn

Yong In Park

Kyeong Jin Kim

Yun Bok Lee

Chang Yeon Kim

Joon Young Yang

Joung Won Woo

Jang Jin Yoo

Chang Dong Kim

Chang Won Kim

Do Hee Kwon

Young Sik Jeong

Duk Chul Yun

Hyung Sik Seo

Hoe Sup Soh

Jung Kee Yoon

A large scale polarizer having one or more quartz substrate parts formed as a rectangle, a triangle, or a parallelogram, and a polarizer holder supporting the quartz substrate part. The polarizer holder may be in a lattice structure holding a plurality of quartz substrate parts. A polarizer system employing the large scale polarizer includes a lens making an incident light to a parallel light, the large scale polarizer, and a moving control part coupled to and moving the large scale polarizer.

Large scale polarizer and polarizer system employing it

A large scale polarizer comprises one or more quartz substrate parts formed as a rectangle, a triangle, or a parallelogram, and a polarizer holder supporting the quartz substrate part. The polarizer holder may be in a lattice structure holding a plurality of quartz substrate parts. A polarizer system employing the large scale polarizer comprises a lens making an incident light to a parallel light, the large scale polarizer, and a moving control part coupled to and moving the large scale polarizer.

An in-plane switching mode liquid crystal display device includes first and second substrates and a plurality of gate and data bus lines defining pixel regions and arranged perpendicularly and/or horizontally on the first substrate. A common line is formed with the gate bus line, and a plurality of thin film transistors are formed at respective crossing areas of the gate and data bus lines. A plurality of gate electrodes are connected to the gate bus lines, and a gate insulator having a contact hole on the gate electrodes. A transparent first metal layer including a plurality of first electrodes is on the gate insulator. A passivation layer having a contact hole is on the first metal layer. A transparent second metal layer including a plurality of second electrodes is on the passivation layer. A black matrix for preventing light from leaking around the thin film transistor, the gate bus line, and data bus line is on the second substrate. A color filter layer is on the second substrate, and a liquid crystal layer is between the first and second substrates.

In-plane switching mode liquid crystal display device

In-plane switching mode liquid crystal display device having particular common electrodes

The present multi-domain liquid crystal display device includes first and second substrates facing each other; a liquid crystal layer between the first and second substrates; a plurality of gate bus lines arranged in a first direction on the first substrate and a plurality of data bus lines arranged in a second direction on the first substrate to define a pixel region; a thin film transistor positioned at a crossing area of the data bus line and the gate bus line, the thin film transistor comprising a gate electrode, a semiconductor layer, and source/drain electrodes; a pixel electrode on the first substrate, the pixel electrode having at least one window inducing electric field therein; a color filter layer on the second substrate, the color filter layer having at least one window distorting electric field therein; a common electrode on the color filter layer; and an alignment layer on at least one substrate between the first and second substrates.

Multi-domain liquid crystal display device and method of manufacturing thereof

A method of fabricating a polysilicon thin film transistor on a substrate includes forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode including the substrate, sequentially forming an intrinsic amorphous silicon layer and a doped amorphous silicon layer on the gate insulating layer, forming a catalytic metal layer on the doped amorphous silicon layer by an ion doping method, simultaneously crystallizing the doped amorphous silicon layer and the intrinsic amorphous silicon layer so as to form a doped polysilicon layer and an intrinsic polysilicon layer, respectively, forming a source electrode and a drain electrode on the doped polysilicon layer, and removing a portion of the doped polysilicon layer between the source and drain electrodes.

Method for fabricating polysilicon thin film transistor

An X-ray image sensor which includes: a photoelectric conversion part effecting electric charges in accordance with received amount of X-ray; a pixel electrode for collecting the electric charges; a storage capacitor for storing the electric charges collected in the pixel electrode, having a first capacitor electrode, a dielectric layer deposited on the first capacitor electrode and a second capacitor electrode on the dielectric layer, the second capacitor electrode contacting the pixel electrode through a first contact hole formed in a protection film on the second capacitor electrode; and a switching part controlling release of electric charges stored in the storage capacitor to an outer circuit. By the present invention, the switching characteristics of the TFT is enhanced by way of forming a two-layered protection film of silicon nitride and BCB on the channel portion of TFT, the capacity of the parasitic capacitor, which exists between the pixel electrode and the TFT, can be decreased.

X-ray image sensor and method for fabricating the same

A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.

Liquid crystal display and method of manufacturing the same

A large scale polarizer comprises one or more quartz substrate parts formed as a rectangle, a triangle, or a parallelogram, and a polarizer holder supporting the quartz substrate part. The polarizer holder may be in a lattice structure holding a plurality of quartz substrate parts. A polarizer system employing the large scale polarizer comprises a, lens making an incident light to a parallel light, the large scale polarizer, and a moving control part coupled to and moving the large scale polarizer.

A liquid crystal display device having a plurality of pixels, each pixel having a plurality of domains. In boundary regions between the domains, an opaque metal layer is formed to shield light transmission through these boundary regions and also to stabilize potential applied to pixel electrodes. A polyimide or photo-sensitive alignment layer is rubbed by fabric or exposed to light to provide alignment directions.

Growing community of inventors

Seoul, South Korea

Jae Beom Choi