Samsung Electronics Co., Ltd.

Jae-beom Byun

Jin-young Choi

Jung-hoon Kim

Jong-yun Yun

Chung-Hyun Ryu

Eok-soo Shim

Joon-young Oh

Won-hwa Lee

Do-il Kong

Hu Zhao

Jong-gyu Park

Hee-youb Kang

A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.

Method of controlling temperature of non-volatile storage device

A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.

Secondary memory device

Growing community of inventors

Suwon-si, South Korea

Jae-beom Byun