Balzers Aktiengesellschaft

Unaxis-balzers Aktiengesellschaft

Solems (s.a.)

Oc Oerlikon Balzers Ag

Oerlikon Trading Ag, Trubbach

Tel Solar Ag

Unaxis Balzers Limited

Balzers Hochvakuum Ag

Unakis Balzers Ag

Oerlikon Solar IP Ag, Trubbach

Solems

Oerlikon Solar IP Ag, Truebbach

Societe Dite: Solems (societe Anonyme)

Phototronics Ohg

Jacques Schmitt

Emmanuel Turlot

Jerome Perrin

Rudolf Wagner

Thierry Emeraud

Mustapha Elyaakoubi

Jean-Baptiste Chevrier

Jean Barreiro

Ulrich Kroll

Christoph Hollenstein

Markus Poppeller

Jean-Marie Siefert

Juliette Ballutaud

Alain Ricaud

Alan Howling

Paul-Rene Muralt

Hanh Pham

Philippe Grousset

Frangois Leblanc

Cédric Bucher

Paul-Ren&eacute; Muralt

Cedric Bucher

Fran&ccedil;ois Leblanc

A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings extending through the metallic surface towards said discharge space and from a distribution chamber extending along the plate opposite the discharge space. The distribution chamber has a wall opposite and distant from the plate and includes a gas inlet arrangement with a plurality of gas inlet openings distributed along the wall and connected to one or more gas feed lines to the reactor. A gas flow resistant coefficient between the one or more gas feed lines and at least a predominant portion of the connected inlet openings are at least substantially equal.

RF plasma reactor having a distribution chamber with at least one grid

A radiofrequency plasma reactor with first and second spaced electrodes has a concave surface facing a substrate supporting surface. A process area between the electrodes has a gas inlet for a process gas. A radiofrequency generator for frequencies greater than 13.56 MHz is connected to an electrode for generating a plasma discharge in and a gas outlet evacuates process gas. A dielectric layer has a convex surface engaging the concave electrode surface and an opposite planar surface. The substrate supporting surface receives a substrate of at least 0.7 m and defines a boundary of the process area to be exposed to the plasma. The dielectric layer is electrically in series with the substrate and plasma discharge and has capacitance per unit surface values which are not uniform for a distribution profile to compensate process non-uniformity along the working surface.

Plasma reactor for the treatment of large size substrates

The invention relates to a lifting and supporting device for handling and positioning particularly large-surface elements in the shape of panels, especially in plasma processing installations. Said lifting and supporting device comprises a particularly metallic base plate, on which a plurality of particularly dielectric pins are arranged. Said pins may be set in pin holes especially provided in the base plate. Said panel-shaped element may be positioned on the pin end for the handling thereof or during a plasma processing. Said panel-shaped element may present an electrostatic charge. A small diameter for the pins and pin holes is selected such that, in conformity with the panel-shaped element provided with the electrostatic charge, an undesired electrostatic charge on said panel-shaped element is essentially avoided or, in conformity with the panel-shaped element to be plasma processed, a plasma perturbation in the area of the pin holes or pins is essentially avoided.

Lifting and supporting device

A radiofrequency plasma reactor () for the treatment of substantially large sized substrates is disclosed, comprising between the electrodes () of the plasma reactor a solid or gaseous dielectric layer () having a non planar-shaped surface-profile, said profile being defined for compensating a process non uniformity in the reactor or generating a given distribution profile.

A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Method for producing semi-conducting devices and devices obtained with this method

A process for the vacuum treatment of workpieces, includes loading the workpieces into a treatment facility, surface treating the workpieces in at least one vacuum station of the facility grouped as a station batch and controlling at least the timing of the process by a freely programmable process controller unit. At least two stations operating each on workpiece batches can be grouped as respective station batches and be different with respect to number of workpieces. The workpieces can be transported to and from the grouped stations. An embodiment of vacuum treatment system for such a process includes at least one vacuum treatment station for workpieces grouped as a station batch. A transport system supplies the vacuum station with workpieces. A process controller unit has an output operationally connected to a drive arrangement for the transport system. The unit controls operating timing of the treatment system and is freely programmable.

Processes for vacuum treating workpieces, and corresponding process equipment

A chemical vapor deposition method and apparatus is disclosed. The process is carried out in an apparatus having a number reactive zones, each surrounded by a corresponding exhaust zone, all of which are both contained within a buffer zone. Pressure relationships are controlled such that buffer gas from the buffer zone flows into the exhaust zones and reactive gas from the reactive zones flow into the exhaust zones. As a result, cross-contamination of gases between the reactive zones is avoided.

Method and apparatus for ALD on a rotary susceptor

For increasing the rate with which a workpiece is treated in a plasma enhanced chemical vapor deposition method and thereby lowering for coating treatment exposure of the coating to ion impact, there is maintained a non-vanishing dust particle density along the surface to be treated with a predetermined density distribution along this surface. The density distribution may be controlled by appropriately applying a field of force substantially in parallelism to the surface to be treated and acting on the dust particles entrapped in the plasma discharge.

Method for improving the rate of a plasma enhanced vacuum treatment

A ballast layer for a field emissive device includes a very thin layer of strongly doped nanocrystalline silicon and one or more moderately doped layers of an amorphous silicon-based material.

Ballast layer for field emissive device

Design of gas injection for the electrode in a capacitively coupled RF plasma reactor

A method of manufacturing workpieces, includes loading the workpieces into a treatment facility, surface treating the workpieces in at least one vacuum station of the facility grouped as a station batch and controlling at least the timing of the process by a freely programmable process controller unit. At least two stations operating each on workpiece batches can be grouped as respective station batches and be different with respect to number of workpieces. The workpieces can be transported to and from the grouped stations. An embodiment of vacuum treatment system for such a process includes at least one vacuum treatment station for workpieces grouped as a station batch. A transport system supplies the vacuum station with workpieces. A process controller unit has an output operationally connected to a drive arrangement for the transport system. The unit controls operating timing of the treatment system and is freely programmable.

Process for vacuum treating workpieces, and corresponding process equipment

A capacitively coupled RF plasma reactor allows treatment of large workpiece surfaces with an accurate control of ion bombardment onto the respective electrode surfaces and thus an adjacent workpiece, be it to a desired low or to a desired high level. The reactor includes a first and a second electrode arrangement mutually spaced and confining a plasma reaction volume, at lest one of the electrode arrangements comprising electrically mutually isolated sub-electrodes, a first group of the sub-electrodes being commonly connected to a first electric input, and a second group of the sub-electrodes being commonly connected to a second electric input. The reactor thus substitutes at least one of the two customarily used reactor electrodes by an array of sub-electrodes which, by way of their respective first and second electric inputs, may be independently and thus differently electrically operated, usually but not exclusively with RF voltages.

Capacitively coupled RF-plasma reactor

A radiofrequency plasma reactor (,) for the treatment of substantially large sized substrates is disclosed, comprising between the electrodes (,) of the plasma reactor a solid or gaseous dielectric layer (,) having a non planar-shaped surface-profile, said profile being defined for compensating a process non uniformity in the reactor or generating a given distribution profile.

Growing community of inventors

La Ville du Bois, France

Jacques Schmitt