National Research Council of Canada

Other

Jacques Lefebvre

Jianfu Ding

Zhao Li

Patrick Malenfant

Patrick Roland Lucien Malenfant

Chantal Paquet

Benoit Simard

Arnold Kell

Jingwen Guan

Xiangyang Liu

Naiying Du

Yadienka Martinez-Rubi

Fuyong Cheng

François Lapointe

Gregory Lopinski

Paul Finnie

Shan Zou

Girjesh Dubey

The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, but capacitively coupled to, a gate electrode, wherein a polymeric layer encapsulates the carbon nanotubes. The polymeric layer can comprise a first monomeric unit and optionally a second monomeric unit, wherein the first monomeric unit, the second monomeric unit and the relative amounts thereof are optionally selected to provide at least one target electrical property of the thin film transistor. The present application also relates to methods for manufacturing such thin film transistors as well as a methods of selecting a polymeric layer to provide a desired threshold voltage for such thin film transistors.

Thin film transistors comprising carbon nanotube networks encapsulated by a polymeric layer and methods for the manufacture thereof

A composite includes a plastic substrate and an electrical insulator layer formed on the plastic substrate. The electrical insulator layer contains boron nitride nanotubes (BNNTs), which may be unmodified or modified BNNTS. The composite is suitable for use in making printed electronic devices. A process includes providing a plastic substrate and forming on at least a portion of a surface of the plastic substrate a layer that contains the BNNTs. A metallic ink trace is formed on a portion of the layer, such that the metallic ink trace is spaced-apart from the substrate. Using photonic or thermal sintering techniques, the metallic ink trace is then sintered.

Boron nitride nanotube coated substrates for sintering of metallic traces by intense pulse light

An electronic device for sensing a target analyte in a gas, liquid or vapor sample, the device has at least two sensing elements, each sensing element having an exposed layer of a transduction material supported on a dielectric substrate. The dielectric substrate of at least one of the sensing elements is made of a different dielectric material than the dielectric substrate of at least one other of the sensing elements. The different dielectric materials providing a different sensing response according to one or more transduction modes. The plurality of sensing elements in the device yield a specific transduction pattern for a specific target analyte in a gas, liquid or vapor sample.

Sensor platform

Devices and methods to perform Raman spectroscopy with a structured excitation profile to obtain a Raman excitation map. A device includes a broadband light source to emit a broadband light beam and excitation optics to disperse the broadband light beam to strike a sample as incident light according to a structured excitation profile. The device further includes analysis optics to collect scattered light scattered by the incident light striking the sample, block Rayleigh scatter from the collected scattered light in a manner complementary to the structured excitation profile, and direct Raman scatter from the collected scattered light to a sensor to generate a signal to form a Raman excitation map.

Broadband Raman excitation spectroscopy with structured excitation profiles

A two-step sc-SWCNT enrichment process involves a first step based on selective dispersion and extraction of semi-conducting SWCNT using conjugated polymer followed by a second step based on an adsorptive process in which the product of the first step is exposed to an inorganic absorptive medium to selectively bind predominantly metallic SWCNTs such that what remains dispersed in solution is further enriched in semiconducting SWCNTs. The process is easily scalable for large-diameter semi-conducting single-walled carbon nanotube (sc-SWCNT) enrichment with average diameters in a range, for example, of about 0.6 to 2.2 nm. The first step produces an enriched sc-SWCNT dispersion with a moderated sc-purity (98%) at a high yield, or a high purity (99% and up) at a low yield. The second step can not only enhance the purity of the polymer enriched sc-SWCNTs with a moderate purity, but also further promote the highly purified sample to an ultra-pure level. Therefore, this two-step hybrid process provides sc-SWCNT materials with a super high purity, as well as both a high sc-purity (for example greater than 99%) and a high yield (up to about 20% or higher).

Process for purifying semiconducting single-walled carbon nanotubes

A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.

CNT thin film transistor with high K polymeric dielectric

Growing community of inventors

Stoneham-et-Tewkesbury, Canada

Jacques Lefebvre