Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

U.S. Phillips Corporation

Jacques Jules Van Oekel

Johannes Wilhelmus Maria Jacobs

Onno Jan Wimmers

Adriaan F Leenaars

Adriaan F M Leenaars

Christoph Herrmann

Roger Steadman Booker

Matthias Simon

Maria C Van Uden

Jakob W Mulder

Marcel Brouha

Michael J Severens

Gerarda M Timmermans

A detector includes a first detection layer () and a second detector layer (). The first and second detection layers include a first and second scintillator () (), a first and second active photosensing region () (), a first portion () of a first substrate (), and a second portion () of a second substrate (). An imaging system () includes a radiation source (), a radiation sensitive detector array () comprising a plurality of multi-layer detectors (), and a reconstructor () configured to reconstruct an output of the detector array and produces an image. The detector array includes a first detection layer and a second detector layer with a first and second scintillator, a first and second active photosensing region, a first portion of a first substrate, and a second portion of a second substrate.

Multi-layer radiation detector

The present invention relates to a radiation detector device comprising a first array () of a plurality of columnar elements (), wherein at least one of the columnar elements () comprises a base portion () and a protruding portion (), and wherein at least one of the columnar elements () comprises a scintillating material and at least one of the columnar elements () is configured to generate a light ray by a radiation conversion; and a second array () of a plurality of photosensitive elements (), wherein at least one of the photosensitive elements () is assigned to one of the columnar elements () and at least one of the photosensitive elements () is configured to detected the generated light ray and a read-out electronics circuit ().

Radiation detector and method for producing a radiation detector

A method for fabricating a pixelated scintillator including providing a pixelated scintillator-structure and a connection-structure in such a way that the connection-structure is in mechanical contact with two adjacent pixels of the pixelated scintillator-structure. Moreover, the pixelated scintillator-structure includes a first sintering-shrinking-coefficient and the connection-structure includes a second sintering-shrinking-coefficient that is greater than the first sintering-shrinking-coefficient. Further, the pixelated scintillator-structure and the connection-structure are sintered such that a gap between two adjacent pixels of the pixelated scintillator-structure is reduced.

Pixelated scintillator with optimized efficiency

A method for treating substrates, such as silicon wafers, wherein the substrates are immersed for some time in a bath containing a liquid and are taken therefrom so slowly that practically all of the liquid remains in the bath. The substrates are brought from the liquid directly into contact with a vapor of an organic solvent which is mixed with a carrier gas and introduced from gas leads having outlet nozzles. The vapor is miscible with the liquid to yield a mixture having a surface tension lower than that of the liquid, and which does not condense on the substrates. No drying marks with organic or metallic residues or other contaminations remain on the substrates.

Method and arrangement for drying substrates after treatment in a liquid

Apparatus for treating substrates, such as silicon wafers (,), wherein the substrates are immersed for some time in a bath (,) containing a liquid (,) and are taken therefrom so slowly that practically all of the liquid remains in the bath (,). The substrates (,) are brought from the liquid (,) directly into contact with a vapor of an organic solvent which is mixed with a carrier gas and introduced from gas leads (,) having outlet nozzles (,). The vapor is miscible with the liquid (,) to yield a mixture having a surface tension lower than that of the liquid, and which does not condense on the substrates. No drying marks with organic or metallic residues or other contaminations remain on the substrates (,).

Apparatus for treating substrates using the marangoni effect

A method and an arrangement is provided for treating substrates, such as, for example, silicon wafers (1), in which the latter are immersed for some time in a bath (2) containing a liquid (1) and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath (2). According to the invention, the substrates (1) are brought from the liquid (3) directly into contact with a vapor not condensing thereon via leads (17) with outlet nozzles (18). The vapor is of a substance miscible with the liquid (3), which, when mixed therewith, yields a mixture having a surface tension lower than that of the liquid. It has been found that no drying marks with organic or metallic residues or other contaminations then remain on the substrates (1).

A method and an arrangement is provided for treating substrates, such as, for example, silicon wafers (1), in which the latter are immersed for some time in a bath (2) containing a liquid (3) and are then taken therefrom so slowly that practically the whole quantity of liquid remains in the bath (2). According to the invention, the substrates (1) are brought from the liquid (3) directly into contact with a vapor not condensing via leads (17) with outlet nozzles (18). The vapor is of a substance miscible with the liquid (3), which, when mixed therewith, yields a mixture having a surface tension lower than that of the liquid. It has been found that no drying marks with organic or metallic residues or other contaminations then remain on the substrates (1).

A color cathode ray tube has a shadow mask. The shadow mask is provided with a layer of a material having an average Z number below 20 on the side facing the phosphor screen. The layer is preferable deposited by means of electrodeposition.

Color cathode ray tube having a shadow mask provided with an

The invention relates to the manufacture of a semiconductor device, in which a titanium-tungsten layer (5) must be etched. In order to obtain a homogeneous course of the etching process, according to the invention, the etching is effected in a buffered hydrogen peroxide solution having a pH between 1 and 6.

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Eindhoven, Netherlands

Jacques Jules Van Oekel