Rca Inc.

University of Colorado

Astralux, Inc.

General Electric Company

Astrulux, Inc.

Jacques I Pankove

Chung P Wu

Garret R Moddel

David E Carlson

Ming L Tarng

Kenneth Douglas

John Tarje Torvik

Christian V Radehaus

Michael Ettenberg

Henry Kressel

Frank J Marlowe

Harry Francis Lockwood

Moeljanto W Leksono

Chang-Hua Qiu

Murray Alfred Lampert

A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.

Heterojunction bipolar transistor containing at least one silicon carbide layer

A GaN boule is epitaxially grown by reacting a vapor of the metal Ga with the gas NH at a high temperature of about 1200-degrees C., which high temperature causes the NH to dissociate into the two elements N and H. A seed 51 of GaN is placed within a growth-furnace that is heated to about 1200-degrees C., and an input stream of Ga vapor and NH gas are directed incident on the GaN seed. An upward-facing, shower head-shaped, manifold is provided to uniformly distribute the Ga vapor and the NH gas to the interior of the growth-furnace at a location that is generally below and spaced from the bottom of the GaN seed. GaN vapor is thus formed within this space, generally adjacent to the surface of the boule. At the exterior surface of the GaN seed, the Ga vapor reacts with the NH gas to epitaxially form solid GaN on the exterior surface of the GaN seed, and to also form H .

Method and apparatus for growing a gallium nitride boule

An electroluminescent solid state device includes an active body member that is formed of a single crystalline metal oxide, such as aluminum oxide, that is doped with a rare earth element, such as erbium and/or terbium and an activator atom such as oxygen and/or fluorine. The metal oxide body member is electron excited by kinetic electrons that are emitted by a cold cathode. The ends of the metal oxide body member are polished to form a Fabry-Perot resonator, thus providing for coherent radiation from the device. As an alternative to the use of a Fabry-Perot cavity, an acoustic wave generator is associated with the metal oxide body member in order to launch acoustic waves into the body member. The frequency of energization of the acoustic wave generator operates to select a radiation wavelength from one or more emission wavelengths that are produced by doping the metal oxide body member with one or more rare earth elements. In an embodiment of the invention the active body member is a thin film that is about 1 micron thick wherein kinetic electrons are injected into the thin film by operation of a high magnitude electrical field that is in the range of from about 10,to 10,volts per centimeter.

Electroluminescent solid state device

A semiconductor-chip is bonded to a chip-carrier substrate by way of a gold-to-gold bonding interface. A vacuum chuck is provided to physically hold the semiconductor-chip in physical contact with, the chip-carrier substrate as static force, ultrasonic power, and an elevated temperature are applied to two mating gold surfaces that are formed by two continuous and physically mating gold layers. The bonded assembly is encased in a potting ceramic, or the bonded assembly is encased in a housing that includes a transparent cover that enables use as an optoelectronic semiconductor device.

Method and apparatus for packaging high temperature solid state electronic devices

An electroluminescent solid state device includes an active body member that is formed of a single crystalline metal oxide, such as aluminum oxide, that is doped with a rare earth element, such as erbium and/or terbium and an activator atom such as oxygen and/or fluorine. The metal oxide body member is electron excited by kinetic electrons that are emitted by a cold cathode. The ends of the metal oxide body member are polished to form a Fabry-Perot resonator, thus providing for coherent radiation from the device. As an alternative to the use of a Fabry-Perot cavity, an acoustic wave generator is associated with the metal oxide body member in order to launch acoustic waves into the body member. The frequency of energization of the acoustic wave generator operates to select a radiation wavelength from one or more emission wavelengths that are produced by doping the metal oxide body member with one or more rare earth elements.

Method and apparatus for packaging high temperature solid state

Dynamic variation in the color produced by a silicon quantum dot laser is achieved by utilizing segmented sections or patches of quantum dots of differing sizes to produce different colors of light. The amount of each color of light produced is controlled by selectively biasing the segments of quantum dots. The light is caused to resonate coherently and is emitted out by a diffraction grating. The dynamic variation in the color of light produced by such a device makes it useful as a multicolor pixel in a color display of images.

Silicon quantum dot laser

A number of light sensitive/generating devices are arranged in rows and columns to thereby form an X-Y pixel matrix. All devices are interconnected to a source of operating voltage such that the first device to turn on, i.e., the first device to receive an actuating intensity of light is actuated to thereafter emit light. The current flow through this one activated device causes a voltage drop that prevents any other light sensitive/generating device from turning on. In this way, the pixel that receives the maximum light intensity is identified by its position in the X-Y matrix. Both optical and electrical means are provided to locate the X-Y matrix position of the activated light sensitive/generating device. In an optical embodiment, two orthogonal cylindrical lenses are placed in front of two linear CCDs in order to find the X-Y coordinates of the active light sensitive/generating device. In an electrical embodiment, the X-Y coordinates of the active light sensitive/generating device is electrical read out by reading the current through row/column resistors that are associated with the active light sensitive/generating device. The use of a saw tooth source of operating voltage enables determination of the illumination intensity of the maximum light intensity pixel.

Optoelectronic maximum identifier for detecting the physical location of

A surface emitting semiconductor laser includes a body of a semiconductor material having a pair of opposed surfaces and a plurality of active regions stacked one on the other between the surfaces. Each of the active regions includes a p-type conductivity layer, an n-type conductivity layer and an active layer therebetween. The active layer can either be intrinsic or a quantum well. The p-type and n-type layers are doped to provide a tunneling junction between the layers of adjacent active regions. The active layers of the active regions are spaced apart a multiple of one-half a wavelength to provide distributed feedback. Contacts are on the surfaces of the body with one of the contacts having an opening therethrough through which a generated light beam can emerge.

Surface emitting semiconductor laser

In a semiconductor device, a thin, synthetic diamond film (i.e. a man made film) enhances the transfer of heat from a semiconductor circuit chip to a cooling medium. The heat generating semiconductor circuit chip is located in efficient thermal transfer engagement with one surface of a synthetically deposited diamond film. The opposite surface of the diamond film forms the bottom wall of a cavity that contains a cooling medium. In one embodiment of the invention, the cavity is formed by depositing the diamond film on the surface of a silicon substrate, and then etching the silicon substrate to form an open-top cavity having side walls that comprise the silicon substrate, and having a bottom wall that comprises the diamond film. In a second embodiment of the invention, the open-top cavity is formed by an apertured silicon preform that is bonded to the diamond film. A capping member closes the top of the cavity. A cooling medium is placed within the cavity a fluid cooling medium may be circulated. through the cavity by the use of an inlet and an outlet that are located in the capping member.

Apparatus for semiconductor circuit chip cooling using a diamond layer

The present invention relates to an optical switch which will generate and emit a beam of light when an optical signal is directed therein, but includes means to inhibit the generation of the beam of light when a second optical signal is directed therein. The switch includes a light emitter formed of a plurality of layers of alternating opposite conductivity type which is adapted to generate the beam of light when an optical signal is directed therein. A photovoltaic inhibitor is connected to the emitter so that any current generated by the inhibitor is applied across the emitter in a manner to prevent the generation of the light in the emitter. The photovoltaic inhibitor generates the current when a second optical signal is directed therein. Depending on the external circuit, the device can be operated in either a digital (bistable) or analog mode.

Optical switch

In a semiconductor device, a thin, synthetic diamond film (i.e. a man made film) enhances the transfer of heat from a semiconductor circuit chip to a cooling medium. The heat generating semiconductor circuit chip is located in efficient thermal transfer engagement with one surface of a synthetically deposited diamond film. The opposite surface of the diamond film forms the bottom wall of a cavity that contains a cooling medium. In one embodiment of the invention, the cavity is formed by depositing the diamond film on the surface of a silicon substrate, and then etching the silicon substrate to form an open-top cavity having side walls that comprise the silicon substrate, and having a bottom wall that comprises the diamond film. In a second embodiment of the invention, the open-top cavity is formed by an apertured silicon preform that is bonded to the diamond film. A capping member closes the top of the cavity. A cooling medium is placed within the cavity. A fluid cooling medium may be circulated through the cavity by the use of an inlet and an outlet that are located in the capping member.

Method and apparatus for semiconductor circuit chip cooling

A device having high temperature operating characteristics is provided by depositing n-type cubic gallium nitride on n-type cubic silicon carbide to provide an ohmic contact or electrode. High temperature operating characteristics are also provided in a device having a pn heterojunction between a layer of cubic p-type silicon carbide or gallium arsenide and a first layer of cubic n-type gallium nitride. In a power transistor, a second layer of n-type gallium nitride is deposited on the other surface of the silicon carbide or gallium arsenide to form a pn heterojunction. The gallium nitride layer that is connected as an emitter is forward biased to cause electron injection into the silicon carbide or gallium arsenide layer. In a phototransistor device having high temperature operating characteristics, a transparent layer of cubic n-type gallium nitride is deposited on each side of either cubic p-type silicon carbide or gallium arsenide. Small electrodes are connected to the gallium nitride to minimize blockage of radiation. The radiation passes through either or both gallium nitride layers and across the pn junction to generate a potential between the electrodes. Direction-sensing and position-sensing devices having high temperature and high photon energy operating characteristics are also provided using layers of silicon carbide or gallium arsenide, and gallium nitride.

Growing community of inventors

Boulder, CO, United States of America

Jacques I Pankove