Asml Netherlands B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Carl Zeiss Smt Gmbh

Jacques Cor Johan Van Der Donck

Hans Jansen

Teunis Cornelis Van Den Dool

Anthonius Martinus Cornelis Petrus De Jong

Martinus Hendrikus Antonius Leenders

Antonius Johannus Van Der Net

Peter Franciscus Wanten

Jan Willem Cromwijk

Robert Douglas Watso

Nadja Schuh

Diederik Jan Maas

Vadim Yevgenyevich Banine

Arno Jan Bleeker

Johannes Hubertus Josephina Moors

Johannes Onvlee

Dirk Heinrich Ehm

Freddy Roozeboom

Maarten Hubertus Van Es

Gert-Jan Heerens

Hedser Van Brug

Luigi Scaccabarozzi

Hans Meiling

Ruud Olieslagers

Michiel Peter Oderwald

Gerrit Oosterhuis

Hubert Adriaan Van Mierlo

Almut Czap

Josephus Cornelius Johannes Antonius Vugts

Arnoldus Jan Storm

Nicole Ellen Papen-Botterhuis

Sjoerd Oostrom

Raymond Jacobus Wilhelmus Knaapen

Antonius Martinus Cornelis Petrus De Jong

Matijs C Van Den Boer

Dennis Van Den Berg

Klara Maturova

Mona Nagel

Jetske Karina Stortelder

Marijn Sandtke

Maria Isabel Catalina Caballero

Olaf Kievit

Antonius Gerardus Theodorus Maria Bastein

Chien-Ching Wu

Robert Wilhelm Willekers

Lithographic patterning method for creating features on a surface of a substrate, including the steps of: applying a resist material to the surface; performing resist processing steps, including at least: selectively exposing the resist material layer to a surface treatment step, wherein the resist material in the exposed locations is chemically modified; and developing the resist material layer to selectively remove the resist material locally. The method further comprises detecting, during or after the resist processing steps, a chemical modification of the resist material for monitoring or evaluating the processing steps. The step of detecting is performed by scanning the surface using a scanning probe microscopy device, and wherein the scanning includes contacting the surface with the probe tip in a probing area. The probing area coincides with at least one location of the exposed locations and non-exposed locations, for detecting the chemical modification. The document further describes a system.

Lithographic patterning method and system therefore

The invention is directed to a method for removing particulate contaminants from the backside of a wafer or reticle, and to a cleaning substrate for use in such method. In the method of the invention particulate contaminants are removed from the backside of a wafer or reticle with a cleaning substrate. The cleaning substrate comprises protrusions and a tacky layer between the protrusions. The method comprises contacting the backside of the wafer or reticle with the protrusions of the cleaning substrate while maintaining a distance between the wafer or reticle and the tacky layer, the distance being in the range of 1-10 &#x3bc;m.

Removing particulate contaminants from the backside of a wafer or reticle

A particulate contamination measurement method and apparatus are discussed. The method, for example, comprises pressing a measurement surface () of a polyurethane elastomer () against a surface () to be measured, removing the polyurethane elastomer from the surface without leaving residues, then using an optical apparatus () to detect particles () which have been removed by the polyurethane elastomer from the surface and which have become attached to the polyurethane elastomer.

Particulate contamination measurement method and apparatus

An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).

Lithographic apparatus and contamination removal or prevention method

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.

Method and apparatus for depositing atomic layers on a substrate

A method of cleaning a lithography apparatus using an aerosol spray is described. The spray from the aerosol is contained in a space.

Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus

An optical assembly is mounted in a projection exposure apparatus () for EUV microlithography and includes at least one vacuum chamber (), at least one optical element () arranged in the vacuum chamber (), the optical element () having an optical surface () arranged to be impinged upon by a useful beam bundle () of the projection exposure apparatus (), and a cleaning device () configured to clean the optical surface (). The cleaning device () is configured to perform particle cleaning of the optical surface () at a gas pressure within the vacuum chamber () which is higher than a vacuum pressure (p) for performing an exposure operation with the projection exposure apparatus (). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

Particle cleaning of optical elements for microlithography

A lithographic apparatus is disclosed. The apparatus includes an illumination system configured to condition an extreme ultraviolet radiation beam, a patterning device configured to impart the extreme ultraviolet radiation beam with a pattern in its cross-section to form a patterned extreme ultraviolet radiation beam, a substrate table constructed to hold a substrate, a projection system provided with reflective optics configured to project the patterned extreme ultraviolet radiation beam onto a target portion of the substrate, a vacuum chamber constructed to create a vacuum environment, and a detection unit arranged within the vacuum chamber to detect contamination on the patterning device.

Lithographic apparatus and method

The invention relates to a method and device of inspecting contamination particles on an object comprising a patterned structure. The device includes a radiation system for directing a radiation beam to the object. The object is configured to scatter the beam. The device also includes an optical system arranged to receive scattered radiation from the object, and a filter provided in the optical system. The filter is associated with the patterned structure so as to filter out radiation from the scattered radiation. The device also includes a detector arranged to detect a fraction of radiation that is transmitted by the filter. Accordingly, contamination particles may be detected quickly and accurately.

Inspection method and apparatus using same

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Alphen aan den Rijn, Netherlands

Jacques Cor Johan Van Der Donck