Merck Patent Gmbh

Jacob Woodruff

Charith Nanayakkara

Peer Kirsch

Henning Seim

Sebastian Resch

Charles Dezelah

Ravindra Kanjolia

Marc Tornow

Daniel Moser

Gerd-Volker Roeschenthaler

Guo Liu

Romana Pajkert

Joby Eldo

Takuya Kamiyama

Jean-Sébastien Lehn

Mark C Potyen

Shawn Sungeun Hong

Jean-S Bastien Lehn

Methods of forming molybdenum-containing films are provided. The methods include thermally depositing a first film on a surface of a substrate, for example, at a first temperature less than or equal to about 400° C., and thermally depositing the molybdenum-containing film (second film) on at least a portion of the first film, for example, at a second temperature of greater than about 400° C. The first film can include an elemental metal, for example, tungsten, molybdenum, ruthenium, or cobalt. The second film includes a reaction product of a molybdenum-containing precursor and a reducing agent.

Methods of forming molybdenum-containing films deposited on elemental metal films

Compounds for selectively forming metal-containing films are provided. Methods of forming metal-containing films are also provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.

Compounds and methods for selectively forming metal-containing films

A process is described for production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular, in memory elements of the ReRAM type. Additionally, compounds for production of the molecular layer are disclosed, as well as memory elements containing the molecular layer.

Process for the production of a molecular layer and electronic component comprising same

The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula IR-(A-Z)—(B)—(Z-A)-Sp-G  (I)in which the groups occurring have the meanings defined in Claim; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

Method for producing an electronic component which includes a self-assembled monolayer

Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods comprise delivering at least one precursor and an oxygen-free co-reactant, such as hydrazine or alkylhydrazine, to a substrate to form a ruthenium-containing film, wherein the at least one precursor corresponds in structure to Formula (I): (L)Ru(CO), wherein L is selected from the group consisting of a linear or branched C-C-alkenyl and a linear or branched C-C-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C-C-alkenyl, C-C-alkyl, alkoxy and NRR; wherein Rand Rare independently alkyl or hydrogen; and annealing the ruthenium-containing film under vacuum or in the presence of an inert gas such as Ar, N, or a reducing gas such as Hor a combination thereof.

Methods of vapor deposition of ruthenium using an oxygen-free co-reactant

Methods of forming metal-containing films by atomic layer deposition are provided. The methods include delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under sufficient conditions such that the metal-containing film selectively grows on at least a portion of the first substrate.

Methods of atomic layer deposition for selective film growth

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Branchburg, NJ, United States of America

Jacob Woodruff