Mellanox Technologies Silicon Photonics Inc.

Gm Cruise Holdings LLC

Rockley Photonics Limited

Mellanox Technologies, Ltd.

Jacob Levy

Dazeng Feng

Vala Fathipour

Wei Qian

Mehdi Asghari

Ayan Chakrabarty

Zhi Li

Wei Liu

Aaron John Zilkie

Vladimir Ilchenko

Lutfollah Maleki

Guomin Yu

Andrea Trita

Thomas Pierre Schrans

Cheng-Chih Kung

Abu Thomas

Albert Benzoni

Mohammad Esmaeili Rad

Karim El Amili

Elad Mentovich

Scott B Singer

Shai Cohen

Sylvie Rockman

Saeed Fathololoumi

Amir Ali Tavallaee

Richard Kalantar Ohanian

Kamel Benboudjema

Abdelkrim El Amili

Pegah Seddighian

George Keseyan

Chatchai Bushyakanist

David Lew

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm.

Optoelectronic device and array thereof

Various technologies described herein pertain to injection locking on-chip laser(s) and external on-chip resonator(s). A system includes a first integrated circuit chip and a second integrated circuit chip. The first integrated circuit chip and the second integrated circuit chip are separate integrated circuit chips and can be optically coupled to each other. The first integrated circuit chip includes a laser configured to emit light via a first path and a second path. The second integrated circuit chip includes a resonator formed of an electrooptic material. The resonator can receive the light emitted by the laser of the first integrated circuit chip via the first path and return feedback light to the laser of the first integrated circuit chip via the first path. The feedback light can cause injection locking of the laser to the resonator to control the light emitted by the laser (e.g., via the first and second paths).

Injection locked on-chip laser to external on-chip resonator

Various technologies described herein pertain to a time of flight lidar sensor system that uses a coherent detection scheme. The lidar sensor system includes a laser source, a semiconductor optical amplifier, a combiner, and a balanced detector. The laser source emits an input optical signal. The semiconductor optical amplifier receives a first portion of the input optical signal and outputs a modulated optical signal (amplified and modulated). The combiner receives a second portion of the input optical signal and a returned optical signal received responsive to transmission of at least a portion of the modulated optical signal. The combiner coherently mixes the second portion of the input optical signal with the returned optical signal and outputs mixed optical signals. The balanced detector detects the mixed optical signals and generates an output signal (e.g., a differential photocurrent), which can be used to detect a distance to a target.

Time of flight lidar system using coherent detection scheme

An optical coupling device is described herein. The optical coupling device comprises a first waveguide and a second waveguide that are formed on a common substrate, and a resonator that is positioned out of plane with the two waveguides. The resonator and waveguides are positioned such that light traveling in each of the waveguides evanescently couples to the resonator but not to the other of the waveguides. The optical coupling device can be used in connection with improving linewidth of a laser source for a lidar sensor. In another example, the optical coupling device can be used in connection with wavelength division multiplexing.

Systems and methods for efficient coupling between integrated photonic waveguides and electro-optic resonator

An method for characterizing a modulator for fabricating a silicon photonics circuit and an apparatus (e.g., a silicon photonics wafer) made via the method are described. The method includes determining an absorption spectrum of a modulator and determining, based at least on the determined absorption spectrum, an operational bandwidth of the modulator. The method further includes selecting a laser for coupling with the modulator using the operational bandwidth of the modulator. In this way, the laser is selected such that it has an emission bandwidth that corresponds to the operational bandwidth of the modulator.

Optical testing of FK modulators for silicon photonics applications

The optical device includes a light sensor positioned on a base. The light sensor is configured to receive an input light signal and outputs a passed light signal that includes light from the input light signal. The optical device also includes a return system located on the base. The return system is configured to receive the passed light signal from the light sensor and to return at least a portion of the light from the passed light signal back to the light sensor.

Enhancing the bandwidth of light sensors on planar optical devices comprising a light sensor configured to output a passed light signal and to receive at least a portion of the passed light signal

The optical device includes a waveguide positioned on a base and a modulator positioned on the base. The modulator includes a ridge of an electro-absorption medium having a top side and a lateral side. The lateral side is between the top side and the base and the top side has a width. The waveguide is configured to guide a light signal through the modulator such that the light signal is guided through the ridge of electro-absorption medium. A heater is positioned over the lateral side of the electro-absorption medium without being positioned over the entire width of the ridge.

Temperature control of components on an optical device

The optical device includes a waveguide positioned on a base and a modulator positioned on the base. The modulator includes an electro-absorption medium. The waveguide is configured to guide a light signal through the modulator such that the light signal is guided through the electro-absorption medium. A heater is positioned on the electro-absorption medium such that the electro-absorption medium is between the base and the heater.

The optical device includes an optical modulator positioned on a base. The modulator includes a ridge extending upward from the base. The ridge includes an electro-absorption medium through which light signals are guided. A thermal conductor is positioned so as to conduct thermal energy away from the ridge. The distance between the thermal conductor and the ridge changes along a length of at least a portion of the ridge.

Control of thermal energy in optical devices

An optical system includes a laser cavity on a base. The laser cavity generates a light signal in response to application of an electrical current to the laser cavity. The system includes first electronics that apply a target level of the electrical current to the laser cavity so as to cause the laser cavity to generate the light signal. The light signal experiences mode hops at electrical current levels that shift to higher current levels in response to increasing laser operation times. A first one of the mode hops occurs at a first current level and a second one of the mode hops occurs at a second current level that is higher than the first current level. The system also includes a phase shifter that interacts with the laser cavity so as to shift the mode hops to lower current levels than occur in the absence of the phase shifter.

Resolution of mode hopping in the output of laser cavities

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Sierra Madre, CA, United States of America

Jacob Levy