Oti Lumionics Inc.

Jacky Qiu

Michael Helander

Zhibin Wang

Yi-Lu Chang

Qi Wang

Zheng-Hong Lu

Thomas Lever

Scott Nicholas Genin

Zhenghong Lu

Dong Gao

Benoit Lessard

Zheng-hong Lu

A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.

Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating

An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)

Materials for forming a nucleation-inhibiting coating and devices incorporating same

An opto-electronic device includes: (1) a subpixel region including: an electrode; an organic layer disposed over the electrode; and a conductive coating disposed over the organic layer; and (2) a light transmissive region including a nucleation inhibiting coating, wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the conductive coating.

Device including a conductive coating disposed over emissive regions and method therefore

An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.

Method for patterning a coating on a surface and device including a patterned coating

An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.

Method for depositing a conductive coating on a surface

An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I).

Patterned conductive coating for surface of an opto-electronic device

An opto-electronic device includes: (1) a first electrode; (2) at least one semiconductor layer disposed over the first electrode, the semiconductor layer including an emissive layer; and (3) a second electrode disposed over the semiconductor layer. The second electrode includes a fullerene-containing magnesium alloy which includes a non-zero amount of a fullerene of up to about 15 vol. % of the fullerene, and the second electrode has a thickness of about 50 nm or less.

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Toronto, Canada

Jacky Qiu