Ferro Corporation

Heraeus Precious Metals North America Conshohocken LLC

Jackie D Davis

Srinivasan Sridharan

George E Sakoske

John J Maloney

Chandrashekhar Sadanand Khadilkar

Gregory R Prinzbach

Stanley Wang

Cody J Gleason

David L Widlewski

Aziz S Shaikh

Ellen Schwartz Tormey

Robert P Blonski

Yie-Shein Her

Hong Jiang

Yi Yang

Mohammed H Megherhi

Nazarali Merchant

Andrew M Rohn, Jr

Orville Washington Brown

James D Walker

Bradford Smith

Thomas Joseph Coffey

Vineet Dua

Ellen S Tomey

Chao Ma

Peter Marley

David Widlewski

Jr Andrew M Rohn

A phosphor in glass (PiG) cover is provided to modulate the color emitted from an LED chip. The PiG cover includes an active layer including glass and phosphor, and a secondary layer including glass and free of phosphor. The active layer is stacked on the secondary layer to form the PiG cover. Alternately the PiG includes an active layer sandwiched between two secondary layers. Two or more active layers can be stacked to each other or disposed side-by-side. An LED chip is arranged under the PiG cover to form an LED package.

Layered phosphor in glass

The present invention describes a new method for creating hybrid edge seals using metal, alloy, powder coated metal and other conductive surfaces in between two substrates. The methods utilize various materials, seal designs, and geometries of hybrid seals based on polymeric powder coatings and glass powder coatings.

High performance organic, inorganic or hybrid seals

A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950&#xb0; C. or below 1100&#xb0; C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO, 5-35 mole % or 0.1-35 mole % BO, 0.1-10 mole % or 0.1-25 mole % AlO, 0.1-10 mole % KO, 0.1-10 mole % NaO, 0.1-20 mole % LiO, 0.1-30 mole % F. The total amount of LiO+NaO+KO is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.

Low K dielectric compositions for high frequency applications

A passivation glass coating composition is provided for forming a fired passivation glass layer on a semiconductor substrate having p-n junction. The passivation glass coating composition includes a glass component that is lead free, cadmium free, alkali metal oxides free, and colored transition metal oxides (i.e. metal oxides of V, Fe, Co, Ni, Cr, Cu, Mn) free. The glass component includes bismuth based glasses, and provides a firing temperature range of 500&#xb0; C. to 900&#xb0; C., and controlled devitrification. Once fired to a semiconductor device, the fired passivation glass layer provides exceptional device performance including no cracking of the fired passivation glass layer, excellent thermal expansion matching to silicon, good chemical resistance to acid and base, and improved device performance.

Passivation glasses for semiconductor devices

The glass composites include glass frit, that when sintered produce a phosphor-containing layer, suitable for use in optical applications. The glass composites can include a crystallizing glass frit, such that phosphor crystals precipitate from the frit composite during sintering, or can include a non-crystallizing glass composition, such that phosphor is added to the frit composite before sintering. The sintering temperatures of the glass are relatively low so that fluorescence of the phosphors will not substantially degrade during sintering. The resulting phosphor-containing layer can be used in various optical applications including those for converting blue light into various color temperatures of white light.

Glass compositions and glass frit composites for use in optical applications

A glass-flake loaded organic sealant system is useful for sealing active layers such as those in electronic devices and solar cells.

Hermetically sealed electronic device using coated glass flakes

Solar cell contacts having good electrical performance are made by a process involving: (a) providing a silicon wafer substrate; (b) providing a paste comprising: (i) aluminum, (ii) glass frit, and (iii) a separate and distinct amount of at least one oxide, such that, together with the aluminum, the glass frit and oxide forms a paste having an exothermic reaction peak, at a temperature of at least 660&#xb0; C. to less than 900&#xb0; C., (c) applying the paste to the silicon wafer substrate to form a coated substrate, and (d) firing the coated substrate for a time and at a temperature sufficient to sinter the aluminum and fuse the glass frit and oxide.

Oxides and glasses for use with aluminum back solar cell contacts

Growing community of inventors

Cleveland, OH, United States of America

Jackie D Davis