USA As Represented by Secretary of the Navy

Raytheon Company

Raytheon Bbn Technologies Corp.

Jack W Holloway

Matthew A Morton

Moe Soltani

Gerhard Sollner

Ruonan Han

Zhaoyang Charles Wang

Ken Dinndorf

John Cangeme

Ajay Subramanian

A technology is described for a Photonic Integrated Circuit (PIC) radio frequency (RF) oscillator. The PIC RF oscillator can comprise an optical gain media coupled to a first mirror and configured to be coupled to the PIC. The PIC can comprise a first optical cavity located within the PIC, a tunable mirror to form a first optical path between the first mirror in the gain media and the first tunable mirror, and a frequency tunable intra-cavity dual tone resonator positioned within the first optical cavity to constrain the first optical cavity having a common optical path to produce tow primary laser tones with a tunable frequency spacing. A photo detector is optically coupled to the PIC and configured to mix the two primary laser tones to form an RF output signal with a frequency selected by the tunable frequency spacing of the two primary tones.

Photonic integrated circuit (PIC) radio frequency oscillator

A finite impulse response (FIR) filter including an input of the FIR filter that receives an RF input signal, a clock input configured to receive a clock signal, an output of the FIR filter that provides a filtered output signal, a plurality of signal paths including a plurality of sample-and-hold circuits and a plurality of multipliers arranged in parallel, each signal path including a respective sample-and-hold circuit and a respective multiplier being configured to receive the RF input signal and the clock signal to provide a modulated output signal, an adder configured to receive n modulated output signals from the plurality of signal paths and combine the n modulated output signals to produce the filtered output signal, and a controller.

Reconfigurable gallium nitride (GaN) rotating coefficients FIR filter for co-site interference mitigation

Embodiments herein relate to a fully integrated broadband interconnect. The system comprises a first integrated circuit, a second integrated circuit, and a coupler structure to connect the first and second integrated circuits, where the coupler structure includes a base portion and a top portion that are connected by two vertical walls. The top portion has a gap that increases a strength of a transverse electric field across the gap when the coupler structure is operating in an odd higher order mode that is horizontally polarized, where the coupler structure is full of a dielectric material, and where the cross-sectional width of the coupler structure is tapered in a direction of wave propagation. The system further comprises a dielectric waveguide attached to the top portion of the coupler structure, where the dielectric waveguide supports the odd higher order mode and an even higher order mode.

Fully integrated broadband interconnect

A coupling ring is bonded onto the opposite ends of a ferroelectric stack ving substantially the same thermal expansion coefficient as the stack. A thin film of silicone compound is wiped onto the axially exposed surfaces of the rings and surfaces provided in a head and a tail mass are configured to mate with them. A plurality of microspheres are mixed uniformly through a liquid adhesive and this mixture is coated onto the suitably shaped surfaces on the head and tail mass. A stress rod reaching between the head and tail mass axially compresses the ferroelectric stack and excess adhesive mixture is squeezed from between the mating surfaces. The thickness of the liquid adhesive is restricted to the diameter of the microspheres to ensure a high impedance match and upon applying the proper amount of heat, rigid joints are set up between the now hardened adhesive and the head and tail mass. Nonrigid joints are created across the silicone compound films to create an optimum impedance match between the ferroelectric stack and the masses and to prevent the transfer of self-destructive tensile strains as the head and tail masses change dimensions in response to changing ambient temperatures.

Apparatus for securing a ferroelectric stack to a weighted projection

A coupling ring is bonded onto the opposite ends of a ferroelectric stack ving substantially the same thermal expansion coefficient as the stack. A thin film of silicone compound is wiped onto the axially exposed surfaces of the rings and surfaces provided in a head and a tail mass are configured to mate with them. A plurality of microspheres are mixed uniformly through a liquid adhesive and this mixture is coated onto the suitably shaped surfaces on the head and tail mass. A stress rod reaching between the head and tail mass axially compresses the ferroelectric stack and excess adhesive mixture is squeezed from between the mating surfaces. The thickness of the liquid adhesive is restricted to the diameter of the microspheres to ensure a high impedance match and upon applying the proper amount of heat, rigid joints are set up between the now hardened adhesive and the head and tail mass. Nonrigid joints or radially displaceable are created across the silicone compound films to create an optimum impedance match between the ferroelectric stack and the masses and to prevent the transfer of self-destructive tensile strains as the head and tail masses change dimensions in response to changing ambient temperatures.

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Arlington, VA, United States of America

Jack W Holloway