1. Intel Corporation (614 from 54,445 patents)

2. Other (3 from 832,398 patents)

3. Google Inc. (2 from 32,215 patents)

4. Sony Group Corporation (2 from 3,303 patents)

5. Tahoe Research, Ltd. (2 from 81 patents)

6. Sony Corporation (1 from 58,123 patents)

7. Intel Corporatuon (1 from 1 patent)

8. Intel Corporatiion (1 from 1 patent)

9. Sk Hynix Nand Product Solutions Corp. (75 patents)

1. 12439659 - Gate-all-around integrated circuit structures having germanium-diffused nanoribbon channel structures

2. 12433007 - Transistor gate trench engineering to decrease capacitance and resistance

3. 12426247 - Capacitor connections in dielectric layers

4. 12414339 - Formation of gate spacers for strained PMOS gate-all-around transistor structures

5. 12376362 - Field effect transistors with a gated oxide semiconductor source/drain spacer

6. 12349416 - Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures

7. 12342614 - Asymmetric gate structures and contacts for stacked transistors

8. 12310101 - Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication

9. 12288803 - Transistor with isolation below source and drain

10. 12266570 - Self-aligned interconnect structures and methods of fabrication

11. 12255234 - Integrated circuit structures having germanium-based channels

12. 12243875 - Forksheet transistors with dielectric or conductive spine

13. 12238913 - Two transistor memory cell using stacked thin-film transistors

14. 12224202 - Forming an oxide volume within a fin

15. 12199142 - Neighboring gate-all-around integrated circuit structures having conductive contact stressor between epitaxial source or drain regions