Silicon Storage Technology, Inc.

Shanghai Join-in Technologies Co., Ltd.

Jack Sun

Nhan Do

Xian Liu

Chunming Wang

Leo Xing

Guo Xiang Song

Andy Yang

Yanmin Han

Da Peng

Jielian Zhao

Jason Li

Tom Peng

A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the first and second areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in the first and second areas, forming a protective layer in the first and second areas and then removing the second conductive layer from the third area, then forming blocks of conductive material in the third area, then etching in the first and second areas to form select and HV gates, and replacing the blocks of conductive material with blocks of metal material.

Method of making memory cells, high voltage devices and logic devices on a substrate

A method of forming a semiconductor device includes recessing the upper surface of first and second areas of a semiconductor substrate relative to the third area of the substrate, forming a pair of stack structures in the first area each having a control gate over a floating gate, forming a first source region in the substrate between the pair of stack structures, forming an erase gate over the first source region, forming a block of dummy material in the third area, forming select gates adjacent the stack structures, forming high voltage gates in the second area, forming a first blocking layer over at least a portion of one of the high voltage gates, forming silicide on a top surface of the high voltage gates which are not underneath the first blocking layer, and replacing the block of dummy material with a block of metal material.

Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocks

A method of forming memory cells, HV devices and logic devices on a substrate, including recessing the upper surface of the memory cell and HV device areas of the substrate, forming a polysilicon layer in the memory cell and HV device areas, forming first trenches through the first polysilicon layer and into the silicon substrate in the memory cell and HV device areas, filling the first trenches with insulation material, forming second trenches into the substrate in the logic device area to form upwardly extending fins, removing portions of the polysilicon layer in the memory cell area to form floating gates, forming erase and word line gates in the memory cell area, HV gates in the HV device area, and dummy gates in the logic device area from a second polysilicon layer, and replacing the dummy gates with metal gates that wrap around the fins.

Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devices

An energy-saving seawater desalination device using power generated in complementary cooperation of wind energy and light energy, and a control method are provided. The device comprises an electrical control cabinet, a photovoltaic power generation component, a wind power generation component, an energy storage device, an electric heater, etc. The present invention supplies power for power loads of a seawater desalination system through solar power generation and wind power generation in a grid-connected system, and cooperates with the traditional power grid to maximize and localize the utilization of new energy power and reduce the waste of resources. In an off-grid system, the photovoltaic power generation component and the wind power generation component convert redundant power into other forms of energy resources for energy storage through a battery or an electric heater under the condition that the generating capacity is enough. When the generating capacity is not enough, the loads are allocated to avoid the waste of energy as much as possible.

Energy-saving seawater desalination device using power generated in complementary cooperation of wind energy and light energy, and control method

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Shanghai, China

Jack Sun