Intel Corporation

Jack S Uppal

Stephen Bradford Gospe

David B Fraser

Kevin M Connolly

Edward John Bawolek

Robert C Sundahl

Jung S Kang

Berni W Landau

A method of fabricating an image sensor having pin photodiodes residing vertically atop underlying CMOS control circuitry. In the preferred technique, pin photodiodes fabricated in amorphous silicon are utilized.

Method of fabricating image sensors using a thin film photodiode above active CMOS circuitry

An image sensor having pin photodiodes residing vertically atop underlying CMOS control circuitry. In the preferred technique, pin photodiodes fabricated in amorphous silicon are utilized.

Image sensor using a thin film photodiode above active CMOS circuitry

The present invention is an image sensor and its fabricating method. The image sensor comprises a photodiode and a dielectric structure. The photodiode is responsive to an amount of incident light from a light source. The dielectric structure is on top of the photodiode and is placed between the photodiode and an inter-level dielectric (ILD) oxide layer. The dielectric structure contains a dielectric material. The ILD oxide layer is made of an oxide material and has an ILD oxide thickness.

Embedded dielectric film for quantum efficiency enhancement in a CMOS

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San Jose, CA, United States of America

Jack S Uppal