Lam Research Corporation

Novellus Systems Incorporated

Jack Kuo

David Wingto Cheung

Hong Shih

Duane Outka

Michael S Kang

Fred Egley

Anthony L Chen

Bruno Morel

Haoquan Fang

Ilia Kalinovski

Joon Hong Park

Kirk J Ostrowski

Anirban Guha

Bayu Thedjoisworo

Ted Li

Zhao Li

Andrew Yao

Guhua Yao

Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.

Ultra low silicon loss high dose implant strip

Provided are methods and systems for removing polysilicon on a wafer. A wafer can include a polysilicon layer and an exposed nitride and/or oxide structure. An etchant with a hydrogen-based species, such as hydrogen gas, and a fluorine-based species, such as nitrogen trifluoride, can be introduced. The hydrogen-based species and the fluorine-based species can be activated with a remote plasma source. The layer of polysilicon on the wafer can be removed at a selectivity over the exposed nitride and/or oxide structure that is greater than about 500:1.

Polysilicon etch with high selectivity

Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

Bare aluminum baffles for resist stripping chambers

Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.

Enhanced passivation process to protect silicon prior to high dose implant strip

Growing community of inventors

Pleasanton, CA, United States of America

Jack Kuo