Sawtek, Inc.

Triquint, Inc.

Triquint Semiconductor Corporation

Jack Chocola

Kevin K Lin

Benjamin P Abbott

George Grama

Gary Monetti

Michael T McClure

Svetlana Malocha

Charles E Carpenter

Joshua M Zepess

Josh Zepress

Phillip Welsh

An electro-mechanical device package includes a cap material permanently bonded to a device wafer encapsulating an electromechanical device. An intermediate material is used to bond the device and capping material together at a low temperature, and a structure including the intermediate material emanating from either the device or cap material, or both, provides an interlocking at the bonding interface. One package includes a reusable carrier wafer with a similar coefficient of thermal expansion as a mating material and a low cost cap wafer of different material than the device wafer. A method for temporarily bonding the cap material to the carrier wafer includes attaching the cap material to the carrier wafer and is then singulated to mitigate thermal expansion mismatch with the device wafer.

Wafer level packaging of materials with different coefficients of thermal expansion

A SAW filter is fabricated at a wafer level for providing desirable temperature characteristics. The filter includes a piezoelectric substrate bonded to a carrier substrate, wherein the coefficient of thermal expansion of the carrier substrate is less than the coefficient of thermal expansion of the piezoelectric substrate. Interdigital transducers are formed on the piezoelectric substrate so as to form a SAW composite die structure. A cap substrate having a coefficient of thermal expansion similar to that of the carrier substrate is bonded to the SAW composite die structure for enclosing the interdigital transducers. Plated vias form signal pad interconnects to input and output pads of the interdigital transducer and a sealing pad formed on the surface of the piezoelectric substrate bonds the SAW composite die structure to the cap substrate.

Wafer-level surface acoustic wave filter package with temperature-compensating characteristics

A SAW filter includes a piezoelectric substrate of Lithium Niobate or optionally Lithium Tantalate having a thickness of at least twice an acoustic wavelength. The piezoelectric substrate is bonded to a surrogate substrate of a silicon material. The surrogate substrate is characterized by a resisitivity of at least 100 ohm-cm and an expansion coefficient compatible with the piezoelectric substrate. A catalytic bonding film between the piezoelectric substrate and the surrogate substrate is formed from a first catalytic bonding film deposited onto a surface of the piezoelectric substrate and a second catalytic bonding film deposited onto a surface of the surrogate substrate. The piezoelectric substrate is bonded to the surrogate substrate through a compression force sufficient for providing a bonding at a normal temperature.

Method of forming a surface acoustic wave (SAW) filter device

Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics

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Lake Mary, FL, United States of America

Jack Chocola