Motorola Corporation

Jack A Schroeder

James E Drye

Vern H Winchell, Ii

Ernel R Winkler

Conrad S Monroe

A flip-chip structure and method connects a semiconductor chip (11) having conductive bumps (16) to a substrate (12) having vias (19) extending from a first side (21) to a second side (18) of the substrate (12). A filler material (22) is deposited into the vias (19), and the conductive bumps (16) are inserted into the vias (19) for connecting the semiconductor chip (11) to a conductive element (17) covering the vias (19) on the second side (18) of the substrate (12).

Structure having flip-chip connected substrates

An interconnect and cooling system has a housing which encloses a semiconductor device which is cooled by a pressurized coolant. The pressurized coolant exerts a force on the semiconductor device and holds it with a constant compressive force against a circuit board. Upon removal of the pressure the housing can be opened to easily and quickly replace the semiconductor device.

Interconnect and cooling system for a semiconductor device

A multifunction ground plane for an electrical device such as an integrated circuit is provided by a plurality of conductors each having one end thereof adapted to be coupled to the electrical device with a ground plane adjacent and electrically isolated from said plurality of conductors. The ground plane includes a plurality of electrically isolated portions each of which can be coupled to the electrical device to provide operating potential and/or signals thereto or therefrom. The isolated ground plane portions have an impedance less than that of the electrical conductors and provide an alternate means for connecting operating potential(s) and/or operating signals to and from the electrical device while still functioning as a ground plane for the electrical conductors.

Multifunction ground plane

A flip chip module including a film having solder receptor pads and interconnect lines to which a plurality of electronic devices and the like are bonded. The film is folded at predetermined areas thereby decreasing the size of this multichip device. A removable heat radiating cover is disposed over the film. This cover allows for both heat dissipation and easy access internal components for both testing and replacement after the flip chip module has been assembled.

Flip chip module

An electronic module having a high density of silicon IC chips is provided by mounting the chips in tapered through-holes in a silicon substrate, filling the edge gaps between the chips and the substrate with a glass so that the chips, the filler glass, and the substrate have a smooth upper surface adapted to receive monolithic interconnections formed by planar metalization methods. The resulting assembly is enclosed in a housing also formed substantially from silicon, which contains electrically isolated pins for contacting the input-output electrodes of the assembly. Preferential etching is used to form the through-holes in the substrate as well as various alignment means on the substrate and other parts of the housing so that they are self-aligning during assembly. Improved performance, reliability, and low cost is obtained.

Method of making a high density IC module assembly

An electronic module having a high density of silicon IC chips is provided by mounting the chips in tapered through-holes in a silicon substrate, filling the edge gaps between the chips and the substrate with a glass so that the chips, the filler glass, and the substrate have a smooth upper surface adapted to receive monolithic interconnections formed by planar metallization methods. The resulting assembly is enclosed in a housing also formed substantially from silicon, which contains electrically isolated pins for contacting the input-output electrodes of the assembly. Preferential etching is used to form the through-holes in the substrate as well as various alignment means on the substrate and other parts of the housing so that they are self-aligning during assembly. Improved performance, reliability, and low cost is obtained.

High density IC module assembly

An improved VLSI device package and an improved method for contacting VLSI devices, in which the occurrences of wire bond shorts and lead voltage drops are substantially reduced, are obtained by providing multiple lead levels in the package, with the N.sub.2 leads on the upper lead level grouped into N.sub.3 bunches separated by N.sub.4 spaces, where each of the N.sub.4 spaces aligns with a bonding target on a corresponding one of the N.sub.1 leads on the lower level leads of the package, and where N.sub.1 &lt;N.sub.2, preferably N.sub.1 .ltoreq.20 to 30% of N.sub.1 +N.sub.2. Wire bonds from the device to the N.sub.1 lower level leads align with the bonding targets, so that wire bonds from the device to the N.sub.2 upper level leads lie in clear corridors between the bonds to the N.sub.1 lower level leads. In this way wire bond crossovers and shorts are avoided. The N.sub.1 lower level leads can be made wide and short and are used for the high current connections. Other leads can also be made wider, thus reducing inductive and resistive voltage drop in the package.

Growing community of inventors

Scottsdale, AZ, United States of America

Jack A Schroeder