Asm IP Holding B.v.

Jaakko Anttila

Suvi P Haukka

Antti Niskanen

Chiyu Zhu

Eric James Shero

Michael Eugene Givens

Jerry Winkler

Petri Räisänen

Timo Asikainen

Tom E Blomberg

Yukihiro Mori

Eva E Tois

Jun Kawahara

Raija H Matero

Hidemi Suemori

A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

Titanium aluminum and tantalum aluminum thin films

The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.

Precursor capsule, a vessel and a method

The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane SiXsilicon precursor, such as octachlorotrisilane (OCTS) SiCl, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

Methods for forming silicon nitride thin films

In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Apparatuses for thin film deposition

Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100&#xb0; C. to 400&#xb0; C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

Removal of surface passivation

In one aspect, methods of forming smooth ternary metal nitride films, such as TiWNfilms, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCland NH, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WFand SiH. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

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Helsinki, Finland

Jaakko Anttila