Lg Innotek Co., Ltd.

Ja Soon Jang

Sung Ho Choo

Sung Jin Son

Hyun Hwi Lee

The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.

Semiconductor light device and fabrication method thereof

Light device and fabrication method thereof

There is provided a versatile display device comprising: a first electrode layer formed on a transparent substrate; an electrochromic layer formed on the first electrode layer; a second electrode layer consisting of a plurality of first conductive line groups arranged in the first direction on the electrochromic layer; a light-emitting device layer formed on the second electrode layer and emitting light; and a third electrode layer formed on the light-emitting device layer and consisting of a plurality of second conductive line groups arranged in the second direction that is different from the first conductive line group.

Growing community of inventors

Gwangju-si, South Korea

Ja Soon Jang