Semes Co., Ltd.

Ja Myung Gu

Tae Hoon Jo

Goon Ho Park

Shant Arakelyan

Jung Mo Gu

Jong Hwan An

Hyo Seong Seong

Young Kuk Kim

Shant Arakel Yan

Ji Hyun Kim

Hyun Jin Kim

Proposed are a method and an apparatus for determining a cable length for plasma processing equipment. More particularly, proposed is a method of determining a length of a power supply cable for plasma processing equipment that performs plasma processing through power supply at radio frequencies (RF) of several tens of MHz or more.

Method and apparatus for determining cable length for plasma processing equipment

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein; a support unit for supporting a substrate within the process chamber; a gas supply unit for supplying a process gas inside the process chamber; and a plasma generation unit for generating a plasma from the process gas, wherein the plasma generation unit comprises: a top electrode disposed above the substrate; a bottom electrode disposed below the substrate; an edge electrode disposed at an edge surrounding the substrate; three high frequency power sources applying a high frequency power to the bottom electrode; and an edge impedance control circuit connecting to the edge electrode.

Substrate treating apparatus and substrate treating method

Provided are an apparatus for multi-level pulsing, which minimizes power reflection when generating plasma using an RF signal having a plurality of pulsing levels, and a substrate processing apparatus including the same. The apparatus includes an RF signal generator for generating an RF signal including a first pulsing level and a second pulsing level that are different from each other, and a matching network for receiving the RF signal and providing a corresponding output signal to a load, wherein the RF signal generator generates the RF signal so that a first target impedance of the first pulsing level and a second target impedance of the second pulsing level are different from each other.

Device for multi-level pulsing, substrate processing apparatus including the same

Disclosed is an apparatus for treating a substrate. The apparatus includes: an RF power supply; a process chamber which performs plasma processing by using power applied from the RF power supply; and an impedance matching unit which is disposed between the RF power supply and the process chamber and performs matching, in which the RF power supply includes a first sensor measuring impedance in a direction of the process chamber and the impedance matching unit, and the impedance matching unit performs impedance matching by reflecting impedance measured in the RF power supply through the first sensor.

Substrate treating apparatus and impedance matching method

The substrate processing apparatus includes a process chamber providing a space for processing a substrate, a chuck member provided in the process chamber and supporting the substrate, a ring member provided to surround the chuck member, an edge electrode disposed in the ring member to be electrically insulated from the chuck member, an edge impedance controller electrically connected to the edge electrode and controlling an electric potential of the edge electrode, and a coupling compensator connected between the chuck member and the edge electrode and provided to cancel or adjust coupling between the chuck member and the edge electrode.

Substrate processing apparatus and method of manufacturing thereof

A plasma processing apparatus includes a processing chamber providing space for plasma generation, a chuck member provided in the processing chamber and supporting a substrate, at least two RF power sources providing RF power of different frequencies to the chuck member, a ring member provided to surround the chuck member, an edge electrode arranged in the ring member to be electrically insulated from the chuck member, and a variable impedance circuit being electrically connected to the edge electrode. The variable impedance circuit includes an adjustable impedance configured to control a potential of the edge electrode and a high-frequency stop circuit configured to block high-frequency power from being transmitted to the adjustable impedance.

Growing community of inventors

Cheonan-si, South Korea

Ja Myung Gu