Rockwell Science Center, Inc.

Skyworks Solutions, Inc.

J L Julian Tham

David R Pehlke

Jun Jason Yao

James L Bartlett

Charles W Seabury

Henry O Marcy, 5th

Kenneth D Pedrotti

Deepak Mehrotra

Mau Chung F Chang

Morten Damgaard

A multi-band transceiver for receiving and transmitting signals within selected GSM frequency bands. Transmission and reception occurs simultaneously and within the same time slot of a TDMA frame. The transceiver includes a first local oscillator LO that selectively oscillates within a bandwidth corresponding to the selected GSM band and outputs a signal having a frequency f . A second local oscillator LO selectively oscillates at a frequency corresponding to the selected GSM band and outputs a signal having a frequency f . A receiver receives a signal having a frequency f and mixes the signals from the first and second local oscillators to generate a demodulating signal having a frequency f , wherein f &equals;f &plusmn;f . A transmitter having a loop architecture includes a VCO that generates a signal having a transmit frequency f equal to f minus a comparison frequency f , and a mixer that mixes the signal from the first local oscillator with the transmit signal to generate an IF signal having a frequency f &equals;f &plusmn;f . A quadrature mixer that modulates the IF signal with baseband &ldquo;I&rdquo; and &ldquo;Q&rdquo; signals, and a phase detector that compares the phases of the IF signal and the signal from the second local oscillator and outputs a control voltage to the VCO.

Multi-band transceiver having multi-slot capability

Power amplifiers having reactive networks (such as classes C, C-E, E and F) employ tunable reactive devices in their reactive networks, with the reactive devices respective reactance values capable of being adjusted by means of respective control signals. The tunable reactive devices are made from micro-electromechanical (MEM) devices capable of being integrated with the control circuitry needed to produce the control signals and other amplifier components on a common substrate. The reactive components have high Q values across their adjustment range, enabling the amplifier to produce an output with a low harmonic content over a wide range of input signal frequencies, and a frequency agile, high quality output. The invention can be realized on a number of foundry technologies.

Integrated tunable high efficiency power amplifier

A high-Q precision integrated reversibly trimmable singleband oscillator and tunable multiband oscillator are presented that overcome the problems laser trimming and solid state switches. This is accomplished using micro-electromechanical system (MEMS) technology to integrate an amplifier and its tunable LC network on a common substrate. The LC network can be configured to provide a very narrow bandwidth frequency response which peaks at one or more very specific predetermined frequencies without de-Qing the oscillator.

Trimmable singleband and tunable multiband integrated oscillator using micro-electromechanical system (MEMS) technology

Growing community of inventors

San Jose, CA, United States of America

J L Julian Tham