Freescale Semiconductor,inc.

J Jack Ren

Mark A Durlam

Gregory W Grynkewich

Brian R Butcher

Jaynal Abedin Molla

Nicholas David Rizzo

Kelly Wayne Kyler

Mark F Deherrera

Jeffrey H Baker

Earl D Fuchs

John J D'Urso

Richard Williams

Thomas V Meixner

A method for fabricating a flux concentrating system () for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line () formed in a substrate () and forming a first material layer () overlying the bit line () and the substrate (). Etching is performed to form a trench () in the first material layer () and a cladding layer () is deposited in the trench (). A buffer material layer () is formed overlying the cladding layer () and a portion of the buffer material layer () and a portion of the cladding layer () is removed.

Method for fabricating a flux concentrating system for use in a magnetoelectronics device

A method for fabricating a cladded conductor () for use in a magnetoelectronics device is provided. The method includes providing a substrate () and forming a conductive barrier layer () overlying the substrate (). A dielectric layer () is formed overlying the conductive barrier layer () and a conducting line () is formed within a portion of the dielectric layer (). The dielectric layer () is removed and a flux concentrator () is formed overlying the conducting line ().

Cladded conductor for use in a magnetoelectronics device and method for fabricating the same

Magnetoelectronic device structures and methods for fabricating the same are provided. One method comprises forming a first and a second conductor. The first conductor is electrically coupled to an interconnect stack. A first insulating layer is deposited overlying the first conductor and the second conductor. A via is etched to substantially expose the first conductor. A protective capping layer is deposited by electroless deposition within the via and is electrically coupled to the first conductor. A magnetic memory element layer is formed within the via and overlying the second insulating layer and the second conductor.

Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same

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Phoenix, AZ, United States of America

J Jack Ren