Asml Masktools B.v.

Asml Masktools Netherlands B.v.

Microunity Systems Engineering, Inc.

J Fung Chen

Kurt E Wampler

Tom Laidig

Douglas Van Den Broeke

Roger F Caldwell

John S Petersen

A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.

Optical proximity correction method utilizing phase-edges as sub-resolution assist features

A method of detecting aberrations associated with a projection lens utilized in an optical lithography system. The method includes the steps of forming a mask for transferring a lithographic pattern onto a substrate, forming a plurality of non-resolvable features disposed on the mask, where the plurality of non-resolvable features are arranged so as to form a predetermined pattern on the substrate, exposing the mask using an optical exposure tool so as to print the mask on the substrate, and analyzing the position of the predetermined pattern formed on the substrate and the position of the plurality of non-resolvable features disposed on the mask so as to determine if there is an aberration. If the position of the predetermined pattern formed on the substrate differs from an expected position, which is determined from the position of the plurality of non-resolvable features, this shift from the expected position indicates the presence of an aberration.

Method and apparatus for detecting aberrations in an optical system

Method and apparatus for detecting aberrations in a projection lens utilized for projection optics

A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of &ldquo;imaging elements.&rdquo; The imaging elements are &pgr;-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form &ldquo;halftone-like&rdquo; imaging patterns. The placement of the ASBs and the width thereof are such that none of the &pgr;-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.

Method of patterning sub-0.25&lgr; line features with high transmission, &ldquo;attenuated&rdquo; phase shift masks

Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strong shifted, no 0 diffraction order, equal line and space chromeless phase edges to weak phase shifters that have some 0 order. Halftoning creates an imbalance in the electric field between the shifted regions and therefore results in the introduction of the 0 diffraction order.

System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features

Method of patterning sub-0.25 lambda line features with high transmission, &ldquo;attenuated&rdquo; phase shift masks

A photolithography mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The mask comprises a plurality of features corresponding to elements forming the integrated circuit, and a plurality of non-resolvable biasing segments disposed on an edge of at least one of the features.

Method of fine feature edge tuning with optically-halftoned mask

There is disclosed a photolithography mask and method of making the same that utilizes serifs to increase the correspondence between an actual circuit design and the final circuit pattern on a semiconductor wafer. The mask uses a plurality of serifs having a size determined by a resolution limit of the optical exposure tool used during the fabrication process. The serifs are positioned on the corner regions of the mask such that a portion of surface area for each of the serifs overlaps the corner regions of the mask. The size of the serifs is about one-third the resolution limit of said optical exposure tool. About 33 to about 40 percent of the total surface area of the serifs overlap the corner regions of the mask.

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Cupertino, CA, United States of America

J Fung Chen