Unitive International Limited

Amkor Technology, Inc.

Unitivie International Limited

J Daniel Mis

Glenn A Rinne

Gretchen Adema

Christine Rinne

Susan Bumgarner

Kevin Engel

Pooja Chilukuri

An electronic device may include a substrate, a seed layer on the substrate, a barrier layer on the seed layer opposite the substrate, and an oxidation barrier on the barrier layer opposite the seed layer. The barrier layer and the seed layer comprise different materials, and the oxidation barrier and the barrier layer may comprise different materials. The seed layer may be undercut relative to the barrier layer and/or relative to the oxidation barrier so that the barrier layer and/or the oxidation barrier define a lip extending beyond the seed layer in a direction parallel with respect to a surface of the substrate. Related methods are also discussed.

Electronic structures including barrier layers and/or oxidation barriers defining lips and related methods

A method includes forming a patterned resist layer comprising a resist layer opening overlying a bond pad of a substrate. The resist layer opening is at least partially filled with a first solder component layer. A second solder component layer is formed on the first solder component layer. The patterned resist layer is removed. The first solder component layer and the second solder component layer are reflowed to form a lead free binary metal alloy solder bump electrically connected to the bond pad.

Lead free alloy bump structure and fabrication method

An electronic device may include an electronic substrate, and an under bump seed metallurgy layer on the electronic substrate. A barrier layer may be provided on the under bump seed metallurgy layer so that the under bump seed metallurgy layer is between the barrier layer and the electronic substrate, and the barrier layer may include nickel and/or copper. Moreover, portions of the under bump seed metallurgy layer may be undercut relative to portions of the barrier layer. In addition, a solder layer may be provided on the barrier layer so that the barrier layer is between the solder layer and the under bump seed metallurgy layer.

Solder structures including barrier layers with nickel and/or copper

Forming an electronic structure may include forming a seed layer on a substrate, and forming a mask on the seed layer. The mask may include an aperture therein exposing a portion of the seed layer, and a barrier layer may be formed on the exposed portion of the seed layer. A bump may be formed on the barrier layer, and the mask may be removed. In addition, portions of the seed layer may be selectively removed using the barrier layer as an etch mask.

Electronic structures including barrier layers defining lips

Metallurgy structures for input/output pads of an electronic devices can be adapted to receive both solder and wire bonds. First and second metallurgy structures, for example, can be provided on respective first and second input/output pads of an electronic device such that the first and second common metallurgy structures have a shared structure adapted to receive both solder and wire bonds. A solder bond can thus be applied to the first metallurgy structure, and a wire bond can be applied to the second metallurgy structure.

Electronic devices including metallurgy structures for wire and solder bonding

Methods of forming an electronic device may include forming an under bump seed metallurgy layer on an electronic substrate. A nickel layer may be formed on the under bump seed metallurgy layer so that the under bump seed metallurgy layer is between the nickel layer and the electronic substrate, and portions of the under bump seed metallurgy layer may be free of the nickel layer. In addition, a solder layer may be formed on the nickel layer so that the nickel layer is between the solder layer and the under bump seed metallurgy layer. In addition, a copper layer may be formed on the under bump seed metallurgy layer before forming the nickel layer with portions of the under bump seed metallurgy layer being free of the copper layer. Accordingly, the under bump seed metallurgy layer may be between the copper layer and the electronic substrate, and the copper layer may be between the under bump seed metallurgy layer and the nickel layer. Related structures are also discussed.

Methods of forming lead free solder bumps

Methods of forming bumps using barrier layers as etch masks

A method of forming an electronic structure may include providing a substrate having a metal pad thereon. A conductive barrier layer may be formed on a first portion of the metal pad, and a second exposed portion of the metal pad may be free of the conductive barrier layer. In addition, an interconnection structure may be provided on the conductive barrier layer with the conductive barrier layer being between the interconnection structure and the metal pad. Moreover, the interconnection structure and the conductive barrier layer may include different materials. Related structures are also discussed.

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Cary, NC, United States of America

J Daniel Mis