Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Oskam Oled Gmbh

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Universitat Basel

Universitat De Valéncia

Cic Nanogune Consolider

Jürgen Bauer

Angela Eberhardt

Florian Peskoller

Dominik Eisert

Mohammad Khaja Nazeeruddin

Jörg Frischeisen

David Hartmann

Thomas Huckenbeck

Michael Schmidberger

Vera Stöppelkamp

Dennis Sprenger

Maximilian Vogl

Albert Schneider

Philipp Erhard

Jürgen Hager

Oliver Woisetschläger

Vesna Mueller

Nusret Sena Gueldal

Pascal Rabenbauer

Klaus-Dieter Bauer

Sebastian Meier

Nail Malikovich Shavaleev

Edwin Constable

Daniel Tordera Salvador

Antonio Pertegas Ojeda

Enrique Orti

Hendrik Jan Bolink

Gerhard DÖLL

Keith Gregorczyk

Frank Vollkommer

Etienne Baranoff

Wiebke Sarfert-Gast

David Vonlanthen

Manuel Delgado

The invention relates to a conversion element comprising a wavelength-converting conversion material, a matrix material in which the conversion material is inserted, and a substrate on which the matrix material and the conversion material are directly arranged, the matrix material comprising at least one condensed sol-gel material selected from the following group: water glass, metal phosphate, aluminium phosphate, monoaluminium phosphate, modified monoaluminium phosphate, alkoxytetramethoxysilane, tetraethyl orthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane or metal alkoxane, the conversion element being arranged in the beam path of a laser source, the conversion element being mounted in a mechanically immobile manner in relation to the laser source, and the radiation of the laser source being dynamically arranged in relation to the conversion element.

Conversion elements comprising an infiltration matrix

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

Optoelectronic component and method for producing an optoelectronic component

A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed. In an embodiment an arrangement includes a conversion element having a wavelength converting conversion material, a matrix material in which the conversion material is embedded and a substrate on which the matrix material with the embedded conversion material is directly arranged, wherein at least one condensed sol-gel material, and a laser source configured to emit primary radiation during operation, wherein the conversion element is arranged in a beam path of the laser source, wherein the conversion element is mechanically immovably mounted with respect to the laser source, and wherein the primary radiation of the laser source is dynamically arranged to the conversion element.

Conversion element, optoelectronic component and method for producing a conversion element

A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed. In an embodiment an arrangement includes a conversion element including a wavelength converting conversion material, a matrix material in which the conversion material is embedded and a substrate on which the matrix material with the embedded conversion material is directly arranged, wherein the matrix material comprises at least one condensed sol-gel material selected from the group consisting of water glass, metal phosphate, aluminum phosphate, monoaluminum phosphate, modified monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, and metal alkoxane, and a laser source configured to emit primary radiation during operation, wherein the conversion element is arranged in a beam path of the laser source, wherein the conversion element is mechanically immovably mounted with respect to the laser source, and wherein the primary radiation of the laser source is dynamically arranged to the conversion element.

An optoelectronic component includes a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and a first layer, the first layer includes at least one conversion material embedded in a glass matrix, the glass matrix has a proportion of 50 to 80 vol. % in the first layer, the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer, and the first layer has a layer thickness of less than 200 &#x3bc;m.

Optoelectronic component and method of manufacturing an optoelectronic component

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Wielenbach, Germany

Jürgen Bauer