Institucio Catalana De Recerca I Estudis Avancats

Fundacio Institut De Ciencies Fotoniques

Iñigo Ramiro

Gerasimos Konstantatos

Onur Ozdemir

Provided are methods for obtaining n-type doped metal chalcogenide quantum dot solid-state films. In some embodiments, the methods include forming an metal chalcogenide quantum dot solid-state film, carrying out a n-doping process on the metal chalcogenide quantum dots of the metal chalcogenide quantum dot solid-state film so that they exhibit intraband absorption, wherein the process includes partially substituting chalcogen atoms by halogen atoms in the metal chalcogenide quantum dots and providing a substance on the plurality of metal chalcogenide quantum dots, to avoid oxygen p-doping of the metal chalcogenide quantum dots. Also provided are optoelectronic devices, which in some embodiments can include an n-type doped metal chalcogenide quantum dot solid-state film (A) obtained by a method as disclosed herein and first (E) and second (E) electrodes in physical contact with two respective distanced regions of the film (A).

Growing community of inventors

Castelldefels, Spain

Iñigo Ramiro