Hitachi Global Storage Technologies Netherlands B.v.

Hitachi, Ltd.

Izuru Ishii

Naoki Koyama

Shigeru Tadokoro

Shuichi Kojima

Norihiro Ookawa

Masatoshi Arasawa

Kouji Okazaki

In one embodiment, a seed layer, an underlayer, and a magnetic domain control layer are laminated on both sides of a magnetoresistive sheet unit. A lower electrode film is thinly formed on an upper portion of the magnetic domain control film. A portion of the lower electrode film near the magnetoresistive sheet unit does not protrude substantially from an upper surface of the magnetoresistive sheet unit. Should the portion protrude, a step from the upper surface of the magnetoresistive sheet unit is about 14 nm or less. This portion and the upper surface of the magnetoresistive sheet unit are formed into a flat surface. An upper electrode film is formed thickly on an upper portion of the lower electrode film on an outside thereof so as to circumvent the flat surface. A protective layer, an upper gap film, and an upper magnetic shield film are also formed.

Magnetoresistive head and fabricating method thereof, and read write separation type head

Even if the track and gap widths are made narrow in a read head, a narrow track head has so far been unable to afford satisfactory off-track characteristics because of a wide shield spacing over electrodes. The invention provides a magnetic head wherein, in the height direction of a magnetoresistive element, the spacing between an upper magnetic shield and a lower magnetic shield at an air bearing surface is narrower than the spacing between the upper and lower magnetic shields formed over a thickest portion of each of electrodes in contact with associated magnetic domain control layers.

Magnetic head with a narrow spacing between magnetic shields at air bearing surface

A tunnel junction MR head can be easily manufactured and arranged as follow. A first tunnel junction is formed by a magnetization free layer, a first magnetization pinned layer and a thin insulated layer formed between the both layers. A second tunnel junction is formed by the magnetization free layer, a second magnetization pinned layer and an insulated layer. The first and second tunnel junctions are connected to both ends of the magnetization free layer through the magnetization free layer. A detection current flowing from a first electrode connected to the first tunnel junction is passed to a second electrode through the first tunnel junction, the magnetization free layer and the second tunnel junction.

Magnetic tunnel junction magnetoresistive head

Growing community of inventors

Kanagawa, Japan

Izuru Ishii