Tokyo Electron Limited

Izumi Hasegawa

Hiroshi Tomita

Tadashi Nishiyama

Akihiro Fujimoto

Shuji Iwanaga

Nobukazu Ishizaka

Kazuo Sakamoto

Kunie Ogata

Takuya Mori

Yoshitaka Hara

Yuichiro Kunugimoto

Shin Inoue

Tomohiro Nakashima

Yasuhiro Kitada

Kousuke Nakayama

A method of adjusting a sensitivity parameter value for substrate defect inspection used in a substrate defect inspection apparatus compares, for each pixel value of a selected virtual inspection substrate, using reference pixel data to be used after adjustment, the deviation amount from an allowable range corresponding to the position thereof and the sensitivity parameter value before the adjustment when each pixel value is deviated from the allowable range, and updates the deviation amount as a new sensitivity parameter value when the deviation amount exceeds the sensitivity parameter value and a difference between the deviation amount and the sensitivity parameter value is equal to or less than a threshold value.

Substrate defect inspection apparatus, method of adjusting sensitivity parameter value for substrate defect inspection, and non-transitory storage medium

In one embodiment, a liquid treatment method includes (A) imaging a discharging port part of the liquid nozzle each time the discharging process is performed to one substrate, and acquiring, from images thus obtained, size data on foreign matter possibly present at the discharging port part; and (B) based on a history of the size data arranged in chronological order, judging whether an abnormality in substrate-processing has occurred. In the item (B), if the number of continuous acquisition, indicating how many times the size data not smaller than a first threshold value has been acquired continuously, exceeds a predetermined value, then judging that an abnormality in substrate-processing has occurred.

Liquid treatment method, substrate processing apparatus and non-transitory storage medium

A potential trouble can be in advance suppressed by analyzing a defect of a wafer. A defect analyzing apparatus of analyzing a defect of a substrate includes an imaging unit configured to image target substrates; a defect feature value extracting unit configured to extract a defect feature value in a surface of the substrate based on the substrate image; a defect feature value accumulating unit configured to calculate an accumulated defect feature value with respect to the substrates to create an accumulation data AH; a defect determination unit configured to determine whether the accumulated defect feature value exceeds a preset critical value; and an output display unit configured to output a determination result from the defect determination unit.

Defect analyzing apparatus, substrate processing system, defect analyzing method and computer-readable storage medium

In the present invention, a planar distribution of pixel values in a picked-up substrate image is decomposed into a plurality of pixel value distribution components through use of a Zernike polynomial for each of substrate images; Zernike coefficients of the pixel value distribution components decomposed through use of the Zernike polynomial are calculated; a median value and values deviated from the median value by a predetermined value or more are extracted for every Zernike coefficients having a same couple of degrees from the calculated Zernike coefficients; substrate images having the extracted values are specified; and a substrate image being a defect inspection reference is created by combining the specified substrate images.

Substrate reference image creation method, substrate defect inspection method, substrate reference image creation apparatus, substrate defect inspection unit and non-transitory computer storage medium

The present invention is a substrate treatment apparatus for performing solution treatment on a substrate, performing post-treatment in a treatment module subsequent to the solution treatment, including: a solution treatment section including a plurality of nozzles prepared for respective kinds of treatment solutions corresponding to lots of substrates; a transfer mechanism for transferring the substrate; a monitoring section monitoring whether there is a failure in discharge of the treatment solution in the nozzle; and a control unit outputting a control signal to prohibit the solution treatment in the solution treatment section for a substrate scheduled to be treated using a nozzle determined to have a failure by the monitoring section and to perform the solution treatment in the solution treatment section for a substrate scheduled to be treated using a nozzle other than the nozzle determined to have a failure.

Substrate treatment apparatus, substrate treatment method and non-transitory storage medium

To provide a coating apparatus which is capable of making short a lag time up to action of a valve and making operate a discharging pump and a valve with the best timing. By employing electric-air regulators ER and ER of small size and high response speed as a speed controller for controlling a switching speed of a switching valve AV or a suck-back valve SV, total flowing course is made short, thereby a time lag up to operation of a valve is made short. Further, by detecting the pressure of a resist liquid being discharged from a discharging pump by a pressure sensor and by controlling the operation of each device of a discharging pump a switching valve AV, and a suck-back valve SV through a controller a discharging pump a switching valve AV, and a suck-back valve SV can be operated with the best timings, and generation of particles due to dripping of a resist liquid at a tip end of a resist nozzle is prevented from occurring.

Coating apparatus

A process solution supplying apparatus including a solution source from which a process solution is supplied, a supply pipe having an upstream end and a downstream end and connected at the upstream end to the solution source, a nozzle connected to the downstream end of the supply pipe, a pump provided on the supply pipe, for supplying the process solution from the solution source to the nozzle, an upstream control valve provided on the supply pipe and located between the pump and the solution source, and a deaerating mechanism provided between the pump and the upstream control valve, for removing gases from the process solution.

Growing community of inventors

Koshi, Japan

Izumi Hasegawa