Sony Corporation

Other

Sony Semiconductor Solutions Corporation

Izuho Hatada

Hironobu Narui

Katsunori Yanashima

Tomonori Hino

Noriyuki Futagawa

Takao Miyajima

Takaaki Ami

Shigetaka Tomiya

Michinori Shiomi

Akira Ohmae

Yuuji Hiramatsu

Hiizu Ootorii

Katsuhiro Tomoda

Shusaku Yanagawa

Shuichi Oka

Nobukata Okano

Naoki Hirao

Takahiro Igarashi

Shun Mitarai

Kiwamu Adachi

Katsuji Matsumoto

Takeshi Kodama

Nobutaka Okano

A device includes: a substrate; and a functional element mounted, the functional element including electrodes. The substrate includes a support substrate, and includes a first seed metal, a second seed metal, and a resin component on the support substrate, the first seed metal being disposed in a section opposed to part or all of a first electrode among the electrodes, and being connected to the first electrode by plating, the second seed metal being disposed in a section opposed to part or all of a second electrode among the electrodes, and being connected to the second electrode by plating, and the resin component being disposed in a layer between the functional element and the support substrate, and fixing the functional element to the support substrate, and being, provided avoiding a neighborhood of an end of the functional element among, opposed side sections of the first and second seed metals.

Electronic device mounted on a substrate

There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.

Radiation detector, imaging unit, and imaging and display system

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Nitride-based III-V group compound semiconductor

A device includes: a substrate; and a functional element mounted, the functional element including electrodes. The substrate includes a support substrate, and includes a first seed metal, a second seed metal, and a resin component on the support substrate, the first seed metal being disposed in a section opposed to part or all of a first electrode among the electrodes, and being connected to the first electrode by plating, the second seed metal being disposed in a section opposed to part or all of a second electrode among the electrodes, and being connected to the second electrode by plating, and the resin component being disposed in a layer between the functional element and the support substrate, and fixing the functional element to the support substrate, and being provided avoiding a neighborhood of an end of the functional element among opposed side sections of the first and second seed metals.

A semiconductor device includes a base substrate on which a substrate electrode is arranged, and a semiconductor element which includes a chip electrode electrically connected via solder to the substrate electrode and in which a light absorbing layer is formed on a lower surface side.

Semiconductor device

Method for growing a nitride-based III-V Group compound semiconductor

Method for growing a nitride-based III-V group compound semiconductor

Disclosed is an electron gun assembling method used for assembling a first electrode having a plurality of beam apertures as opposed to one cathode used as an electron beam emitting source with a cathode structure having the cathode. The method includes: a first step of rotating the cathode structure on its axis in a state in which the cathode structure is opposed to the first electrode, and measuring, during rotation of the cathode structure, a distance between each of the beam apertures of the first electrode and a beam emission plane of the cathode; and a second step of setting a rotational position of the cathode structure on the basis of the result measured in the first step. In the second step, particularly, the rotational position of the cathode structure may be set under a condition that the maximum one of the differences between the distances from the beam apertures of the first electrode to the beam emission plane of the cathode is minimized. With this assembling method, it is possible to reduce a variation in operational characteristics of the electron gun, such as a cutoff characteristic.

Method and apparatus for assembling electron gun

Growing community of inventors

Kanagawa, Japan

Izuho Hatada