Instytut Wysokich Cisnien Polskiej Akademii Nauk

Centrum Badan Wysokocisnieniowych Pan

Centrum Badan Wysokocisnieniowych Polskiej Akademii Navk

Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk

High Pressure Research Center, Polish Academy

Izabella Grzegory

Sylwester Porowski

Tadeusz Suski

Michal Leszczynski

Czeslaw Skierbiszewski

Stanislaw Krukowski

Miroslaw Wroblewski

Jan Jun

Piotr Perlin

Michal Leszczyński

Jan Weyher

Michal Bockowski

Grzegorz Nowak

Boleslaw Lucznik

Elzbieta Litwin-Staszewska

Jacek Baranowski

Henryk Teisseyre

Michal Boćkowski

Przemyslaw Wiśniewski

Anna Feduniewicz-Zmuda

Marcin Siekacz

Katarzyna Holc

The laser diode comprising crystalline substrate () where set of subsequent n-type layers, set of optically active layers () and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (), bottom n-type cladding layer () and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer () and p-type contact layer (). The electron blocking layer comprises In, AlGa, N alloy doped with magnesium where 1&#x2267;x&#x3e;0.001 a 1&#x2267;y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (), set of optically active layers () and set of p-type layers () where the p-type waveguide layer () and p-type contact layer () is deposited with presence of indium in plasma assisted molecular beam epitaxy method.

Nitride based laser diode and method of manufacturing nitride based laser diode

This method of removal of irregularities and highly defected regions of the surface of crystals and epitaxial layers of GaN and Ga Al In N characterized by mechano-chemical polishing on the soft polishing pad under pressure in presence of chemical etching agent of water solution of bases of the total concentration above 0.01N in time longer than 10 seconds after which the agent is replaced by the pure water without interruption of the polishing and polishing by at least 1 minute aid subsequent diminution of the load and stopping of the machine and then the polished GaN crystal or GaAlInN epitaxial layer is removed of the polishing machine and dried in the stream of dry nitrogen.

Mechano-chemical polishing of crystals and epitaxial layers of GaN and Ga1-x-yA1xInyN

The subject of the Invention is the method of fabrication of nitride semiconductor A,B,such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural quality. The semiconductors obtained by this method are applied in the construction of light emitting devices, light detectors and electric current amplifiers such as for example: highly efficient blue and green light diodes, laser diodes and high power lasers, ultraviolet detectors and high temperature field transistors. The method according to the Invention is characterized by the fact that the homoepitaxial or heteroepitaxial layers of nitride semiconductors A,B,are deposited on the conductive substrate after the introductory processing or isolating substrate, and after that the so prepared structures are located in high pressure diffusional chamber filled with the one or multi-component gas, compressed to pressure in the range 1000-20000 bar, and annealed in the temperature 1000-1800 &deg; C. in the prescribed time in the presence of the dopant from the external and/or internal source.

Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity

The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700&deg; C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10&deg; C./cm.

Method of fabrication of highly resistive GaN bulk crystals

Method of making a crystalline multilayer structure at two pressures the

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Warsaw, Poland

Izabella Grzegory