Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Iwao Ueno

Yasuo Wakahata

Akihiro Takami

Kimio Kobayashi

Kaori Okamoto

Kaori Shiraishi

Seiji Nishiyama

Junichi Kato

Masakazu Tanahashi

Emiko Igaki

Naoki Kosugi

Yosuke Honda

Keiichi Noi

Youichi Ogoshi

Yoichi Ogoshi

There is provided a method for producing a zeolite more excellent in moisture absorption characteristics. The method includes physically pulverizing a zeolite that has a gradient of a Na/Si value from a surface of the zeolite in a depth direction, that has a proportion of the Na/Si value at a depth of 10 nm from the surface to the Na/Si value at the surface of 90% or more, and that has a proportion of the Na/Si value at a depth of 30 nm from the surface to the Na/Si value at the surface of 70% or more, the Na/Si value representing a composition ratio between Na and Si, and crystallizing the physically pulverized zeolite.

Method for producing zeolite

A fluorescence particleaccording to the present invention is used for a light emitting display device and is made of a fluorescent material. The fluorescent material has at least one elementselected from the group consisting of Al, Mg, Ca, Ba, Sr and Y. Within a rangefrom the surfaceof the fluorescence particle through a depth of 20 nm, the at least one elementhas a local maximum of its concentration profile in the depth direction.

Light emitting display device, plasma display device and phosphor particles

A light-emitting device according to the present invention includes: first insulators () arranged so as to face each other; an emitter () arranged between the first insulators; a second insulator () functioning as a base for the first insulators and the emitter; an electrode () arranged to face, or contact with, the first insulators partially; another electrode () contacting with the second insulator and interposing the second insulator between the electrode and itself; and a light-transmitting substrate () that faces the second insulator with the first insulators interposed somewhere and with the emitter interposed elsewhere. If the first insulators are extended to reach the light-transmitting substrate on a cross section including the first and second insulators, the emitter and the light-transmitting substrate, the ratio of the cross-sectional area of the emitter to the combined cross-sectional area of the first and second insulators and the light-transmitting substrate is defined so as to fall within a predetermined range.

Light-emitting device configured to emit light by a creeping discharge of an emitter

A light-emitting element of the present invention, includes: a porous light-emitting body including an insulator having a void and an inorganic phosphor particle; and at least two electrodes provided so as to contact with a surface of the light-emitting body. A voltage is applied to the at least two electrodes so as to generate discharge, and the light-emitting body is pumped by the discharge so as to emit light. Thereby, a light-emitting element that is reduced in a deterioration of brightness and a degradation of reliability of phosphors and does not require the vacuum encapsulation and the application of a high voltage, which are required for glow discharge, and still-higher level of thin-film technology can be provided. By arranging these light-emitting elements two-dimensionally in a matrix form, a flat display device with a simple configuration can be provided at a low cost.

Light-emitting element, method for producing the same and display device

The electronic component of the present invention includes: an element having an internal electrode therein; an external electrode formed on an end portion of the element where an end face of the internal electrode is exposed; and a protection layer formed on the entire surface of the element except for the end portion of the element, wherein the protection layer is made of a metal oxide.

Electronic component and method for fabricating the same

Method for producing ceramic parts

A method for manufacturing semiconductor-type laminated ceramic capacitors with a grain boundary-insulated structure including the steps of calcinating starting material of mixed powder in air or in nitrogen atmosphere after grinding, mixing and drying the mixed powder; forming raw sheets; printing a pattern of inner electrode paste on the surface of the raw sheets; calcinating the laminated body in air; sintering the laminated raw sheets in reducing atmosphere or in nitrogen atmosphere after calcination; re-oxidizing in air after sintering; and covering the edges of sintered ceramic sheets with outer electrode paste and baking after re-oxidation, terminals of inner electrodes being exposed to the edges, wherein: the starting material of mixed powder comprises a material of the composition Sr.sub.(1-x) Ba.sub.x TiO.sub.3 containing excess Ti to make a final molecular ratio of Ti to Sr.sub.(1-x) Ba.sub.x in the range of 0.95.ltoreq. Sr.sub.(1-x)Ba.sub.x /Ti&lt; 1.00 (where x is in the range of 0&lt; x.ltoreq. 0.3); a first component of at least one or more kinds of the compounds selected from Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, V.sub.2 O.sub.5, W.sub.2 O.sub.5, Dy.sub.2 O.sub.5, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, La.sub.2 O.sub.3, or CeO.sub.2 ; a second component of Mn and Si converted into MnO.sub.2 and SiO.sub.2 respectively; and an optional third component of at least one or more kinds of the compounds selected from Na.sub.2 SiO.sub.3, NaAlO.sub.2, Li.sub.2 SiO.sub. 3, LiAlO.sub.2, and Al.sub.2 O.sub.3.

Ceramic capacitor with a grain boundary-insulated structure

Semiconductor-type laminated ceramic capacitor with a grain

A laminated semiconductor ceramic capacitor with a grain boundary-insulated structure comprises a semiconductor ceramic block with a grain boundary-insulated structure, a plurality of Ni inner electrodes and outer electrodes, wherein the Ni inner electrodes are obtained from a paste containing a powder prepared by solubilizing at least one compound containing an atom selected from the group consisting of Li, Na and K into Ni or an Ni containing compound; the Ni inner electrodes are placed in a substantially parallel manner within the ceramic block to reach to the corresponding opposite edges of the ceramic block alternatively one by one; and the outer electrodes are electrically connected to the corresponding edges of the inner electrodes, respectively.

Growing community of inventors

Ibaraki, Japan

Iwao Ueno