Sony Corporation

Iwao Sugiura

Hiroshi Horikoshi

Ikuo Yoshihara

Kiyotaka Tabuchi

Hideki Hirano

Akiko Ogino

Kenju Nishikido

Yuuji Nishimura

Haruhiko Ajisawa

Atsushi Matsushita

Kazuto Watanabe

Syota Yamabata

Kensaku Maeda

Tomohiro Yamazaki

Masanori Iwasaki

Kenichi Aoyagi

Toshihiko Hayashi

Yoshinori Toumiya

Kazunori Nagahata

Yoshiyuki Enomoto

Yoichi Otsuka

Naoyuki Miyashita

Yasuyuki Shiga

Katsunori Kokubun

Tadayuki Kimura

A solid-state imaging device includes: a photodiode formed to be segmented with respect to each pixel in a pixel area in which plural pixels are integrated on a light receiving surface of a semiconductor substrate; an insulator film formed on the semiconductor substrate to cover the photodiode; a recessed part formed with respect to each of the pixels in the insulator film in an upper part of the photodiode; a first light transmission layer of a siloxane resin formed to fill the recessed part and configure an optical waveguide in the pixel area; a second light transmission layer formed to configure an on-chip lens with respect to each of the pixels in the pixel area; and a guard ring formed to surround an outer circumference of the pixel area to partition an inner area containing the pixel area and an outer dicing area.

Solid-state imaging device

Semiconductor imaging device having ligth transmission layers formed relative to a guard ring structure in a predetermined manner

A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.

Manufacturing method of semiconductor device, semiconductor device and electronic apparatus

Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.

Solid-state image pickup element, method of manufacturing the same, and electronic apparatus using the same

A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (G), filter components of a second color (R) formed by self-alignment and each being surrounded by the filter components of the first color (G), and filter components of a third color (B) formed by self-alignment and each being surrounded by the filter components of the first color (G).

Solid-state imaging device, manufacturing method thereof, and electronic device

Growing community of inventors

Kanagawa, Japan

Iwao Sugiura