Mitsubishi Denki Kabushiki Kaisha

Iwao Hayase

Takuji Sonoda

Kazuhiro Okaniwa

A method of fabricating a semiconductor device includes preparing a semiconductor substrate having a surface and a mechanical strength; adhering a reinforcing plate to the surface of the semiconductor substrate with an adhesive to increase the mechanical strength of the semiconductor substrate and processing the semiconductor substrate; and immersing the semiconductor substrate with the reinforcing plate in a heated solvent to melt and dissolve the adhesive, thereby separating the semiconductor substrate from the reinforcing plate. An apparatus for performing the methods includes a holder for holding the semiconductor substrate with the reinforcing plate; a container for accommodating the holder and for containing a solvent that dissolves the adhesive and a heater for heating the solvent. When the adhesive between the semiconductor substrate and the reinforcing plate is sufficiently dissolved by the solvent, the semiconductor substrate is separated from the reinforcing plate. Therefore, no force is applied to the semiconductor substrate in the direction perpendicular to the surface of the semiconductor substrate, so that unwanted damage of the semiconductor substrate, such as cracking, is avoided.

Method and apparatus for fabricating semiconductor device

An apparatus for separating a wafer from a support plate, to which the wafer is bonded with a thermally softened adhesive, includes an upper plate having opposite upper and lower surfaces and a plurality of holes having apertures at the lower surface through which air is evacuated to hold the support plate to the lower surface; a lower plate having opposite upper and lower surfaces and a plurality of holes having apertures at the upper surface through which air is evacuated to hold the wafer to the upper surface; a heater for softening the thermally softened adhesive embedded in at least one of the upper and lower plates; a robot arm for moving the upper plate in vertical and horizontal directions; and a shaft for rotatably connecting the upper plate to the robot arm. In operation, after the adhesive connecting the wafer and the support plate is softened by the heater, the robot arm moves the upper plate upward while rotating or turning the upper plate, whereby the support plate is separated from the wafer. Therefore, the wafer is prevented from cracking and breaking, whereby the production yield is increased, resulting in a reduction in the cost of the device.

Apparatus for producing semiconductor wafers

A semiconductor device includes a relatively broad recess in a semiconductor substrate between a source electrode and a drain electrode, a relatively narrow, deeper recess closer to the source electrode than to the drain electrode, and a T-shaped gate electrode having a broad head disposed in the narrower recess. A production method for a semiconductor device having a T-shaped gate electrode provided with a broad head and disposed in a two stage recess includes producing a relatively broad recess in a semiconductor substrate leaving a dummy gate, producing a resist pattern for producing the head of the T-shaped gate electrode, exposing the dummy gate by removing some of the resist pattern, and thereafter producing a narrower, deeper recess closer to the source electrode than to the drain electrode, thereby producing a two stage recess structure and producing a T-shaped gate electrode in the deeper recess.

Growing community of inventors

Itami, Japan

Iwao Hayase