Renesas Technology Corp.

Hitachi Tohbu Semiconductor, Ltd.

Other

Hitachi, Ltd.

Murata Manufacturing Co., Ltd.

Renesas Electronics Corporation

Iwamichi Kohjiro

Osamu Kagaya

Kenji Sekine

Tetsuaki Adachi

Kiichi Yamashita

Yasuhiro Nunogawa

Eiichi Hase

Shizuo Kondo

Sakae Kikuchi

Masahito Numanami

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Semiconductor device

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

A high-frequency power amplifier device is provided in which the number of ground lines on the electronic parts mounting face of a strip line substrate having microstrip lines is reduced or eliminated. Specifically, a metallic cover extending in parallel with the mounting face of the strip line substrate is grounded, and the microstrip lines between this cover and the strip line substrate are electrically connected by connecting means such as capacitors and/or conductors.

High-frequency power amplifier device and high-frequency module

Growing community of inventors

Komoro, Japan

Iwamichi Kohjiro