Murata Manufacturing Co., Ltd.

Leibniz Institute for Solid State and Materials Research Dresden

Ivoyl P Koutsaroff

Akira Ando

Michio Kadota

Tetsuya Kimura

Shoichiro Suzuki

Oliver G Schmidt

Koichi Banno

Shinichi Higai

Hikari Tochishita

Daniel Grimm

A variable capacitance element includes a piezoelectric substrate, a buffer layer located on the piezoelectric substrate with an orientation, a dielectric layer located on the buffer layer and having a relative dielectric constant that varies in accordance with an applied voltage, and a first electrode and a second electrode arranged to apply an electric field to the dielectric layer.

Variable capacitance element and tunable filter

A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich Nanions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO)-(ABON). A represents a divalent element, B represents a tetravalent element, &#x3b3; satisfies 0.005&#x2266;&#x3b3;&#x2266;1.0, 1&#x2212;&#x3b1; satisfies 0.05&#x2266;1&#x2212;&#x3b1;&#x2266;0.9, and 1&#x2212;&#x3b1; is an area ratio between the regions containing rich Nanions and the matrix of remaining oxide perovskite material.

Perovskite material with anion-controlled dielectric properties, thin film capacitor device, and method for manufacturing the same

A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich Nanions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO)-(ABON). A represents a divalent element, B represents a tetravalent element, &#x3b3; satisfies 0.005&#x2266;&#x3b3;&#x2266;1.0, 1-&#x3b1; satisfies 0.05&#x2266;1-&#x3b1;&#x2266;0.9, and 1-&#x3b1; is an area ratio between the regions containing rich Nanions and the matrix of remaining oxide perovskite material.

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Nagaokakyo, Japan

Ivoyl P Koutsaroff