Interuniversitair Microelektronica Centrum (imec)

Umicore, N.v.

Imec Vzw

Imec

Umicore

Ivo Teerlinck

Paul Mertens

Bart Onsia

David Hellin

Jan Van Steenbergen

The present invention provides an impurity measuring method comprising the steps of dropping a drop of a first solution on the surface of a substrate to be measured, moving the drop dropped on the surface of the substrate so that the drop is kept in contact with the surface and collects an impurity absorbed on the surface, recovering the drop after the movement and analyzing the recovered drop by chemical analysis to determine the type and concentration of the impurity, characterized in that the first solution is phobic to the substrate and the substrate consists substantially of Ge. The method is of particular importance for measuring metallic contamination on the surface of Ge substrates.

Impurity measuring method for Ge substrates

This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.

Method for removing oxides from a Ge semiconductor substrate surface

The invention is related to a method of plating of a metal layer on a substrate. The method is particularly preferred for the formation of metallization structures for integrated circuits.

Multi-step method for metal deposition

Growing community of inventors

Linden, Belgium

Ivo Teerlinck