Imec Vzw

Katholieke Universiteit Leuven, Ku Leuven R&d

Katholieke Universiteit Leuven

Ivo Stassen

Rob Ameloot

Dirk De Vos

Philippe Vereecken

Philippe M Vereecken

Silvia Armini

Mikhail Krishtab

A method of producing a metal-organic framework (MOF) film on a substrate is provided. The method includes providing a substrate having a main surface and forming on the main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of the organometallic compound precursor and the at least one organic ligand is provided only in the vapour phase.

Thin metal-organic framework film

Example embodiments relate to selective deposition of metal-organic frameworks. One embodiment includes a method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate. The method includes selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles. The method also includes providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film. The low-k dielectric film has gaps on locations where no metal-containing film was deposited.

Selective deposition of metal-organic frameworks

A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase.

Method of producing a thin metal-organic framework film using vapor phase precursors

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Leuven, Belgium

Ivo Stassen