Ims-ionen Mikrofabrikations Systeme Gmbh

Universitat Gesamthochschule Kassel

Ustav Pocitacovych Systemov, Slovenska Adademia Vled

Ivaylo W Rangelow

Hans Loschner

Ernst Hammel

Pavol Hrkut

Feng Shi

Peter Hudek

Method for the purpose of producing a stencil mask

In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.

Process for producing a carbon film on a substrate

A silicon membrane for use as a micromechanical sensor or as a mask for projection lithography is fabricated by doping a silicon wafer to different thicknesses at different portions and then electrochemically etching away the undoped portion of the wafer.

Silicon membrane and method of making same

Growing community of inventors

Baunatal, Germany

Ivaylo W Rangelow