Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Ivar Tångring

Wolfgang Schmid

Martin Rudolf Behringer

Petrus Sundgren

Ines Pietzonka

Jens Ebbecke

Markus Richter

Andreas Plöβl

Rebecca Römer

Claudia Jurenka

Stefan Heckelmann

Felix Ernst

Nusret Sena Güldal

In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

Optoelectronic component and method for producing an optoelectronic component

A method for producing a conversion element comprising the following steps is described: providing a conversion layer having a matrix, in which phosphor particles are brought in, the phosphor particles comprising a host lattice having activator ions and being concentrated in a enrichment zone, providing a compensation layer having the matrix, in which compensation particles are brought in, which comprise the host lattice and are concentrated in a enrichment zone, and joining the conversion layer and the compensation layer in such a way that the enrichment zone of the conversion layer and the enrichment zone of the compensation layer are arranged symmetrically to one another with respect to a symmetry plane of the conversion element. A conversion element and a component are also specified.

Method for producing a conversion element, conversion element, and radiation-emitting component

An optoelectronic component may include a semiconductor chip configured to emit radiation and a reflection element disposed in the beam path of the semiconductor chip where the reflection element is configured to reflect radiation. The reflection element may include a matrix material having diffuser particles and filler particles embedded therein. The diffuser particles are different from the filler particles. The filler particles may include a matrix having scatter particles embedded therein and/or a ceramic comprising the scatter particles in sintered form.

Optoelectronic component having a reflection element with diffuser particles and filler particles embedded therein

An optoelectronic component is specified comprising a semiconductor body comprising a first semiconductor layer sequence and a second semiconductor layer sequence which are arranged on top of one another in a stacking direction, wherein the first semiconductor layer sequence has a first active region, which generates electromagnetic primary radiation with a first peak wavelength the second semiconductor layer sequence comprises a second active region, which has a section configured to partially absorb electromagnetic primary radiation and to re-emit electromagnetic secondary radiation having a second peak wavelength, and the first peak wavelength is in a red wavelength range and the second peak wavelength is in an infrared wavelength range, or the first peak wavelength is smaller than the second peak wavelength by at most 100 nanometers.

Optoelectronic component, method for driving an optoelectronic component, and illumination device

The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.

Optoelectronic component

A light-emitting semiconductor chip comprises: a radiation-transmissive substrate, an epitaxially grown semiconductor layer sequence on a main surface of the substrate, a first contact and a second contact on a contact surface of the semiconductor layer sequence facing away from the substrate for electrical and mechanical contacting of the semiconductor chip, a transparent, electrically conductive layer which is arranged on the contact side and is electrically connected to the first contact.

Light-emitting semiconductor chip and optoelectronic component

An optoelectronic semiconductor component includes a luminescent diode chip including a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation, and a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and the filter element consists of a II-VI compound semiconductor material.

Optoelectronic semiconductor component

An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer embodied as a multi-quantum well structure arranged between the p-type semiconductor region and the n-type semiconductor region. The multi-quantum well structure includes a plurality of alternating quantum well layers and barrier layers. At least one barrier layer, which is arranged closer to the p-type semiconductor region than to the n-type semiconductor region, is a high barrier layer that has an electronic band gap that is greater than an electronic band gap of the remaining barrier layers.

Optoelectronic semiconductor chip comprising a multi-quantum well comprising at least one high barrier layer

An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one active layer. Furthermore, the semiconductor chip has a top-side contact structure on a radiation main side of the semiconductor layer sequence and an underside contact structure on an underside situated opposite to the radiation main side. Furthermore, the semiconductor chip includes at last two trenches that extend from the radiation main side towards the underside. As seen in a plan view of the radiation main side, the top-side contact structure and the underside contact structure are arranged in a manner spaced apart from one another. Likewise as seen in a plan view of the radiation main side, the trenches are located between the top-side contact structure and the underside contact structure.

Optoelectronic semiconductor chip

A radiation-emitting semiconductor device includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorptive region, and the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength.

Light emitting semiconductor component including an absorptive layer

In at least one embodiment, the semiconductor layer sequence () is provided for an optoelectronic semiconductor chip (). The semiconductor layer sequence () contains at least three quantum wells () which are arranged to generate electromagnetic radiation. Furthermore, the semiconductor layer sequence () includes a plurality of barrier layers (), of which at least one barrier layer is arranged between two adjacent quantum wells () in each case. The quantum wells () have a first average indium content and the barrier layers () have a second, smaller, average indium content. A second average lattice constant of the barrier layers () is thereby smaller than a first average lattice constant of the quantum wells ().

Semiconductor layer sequence, optoelectronic semiconductor chip and method for producing a semiconductor layer sequence

An optoelectronic semiconductor body includes a semiconductor layer sequence having an active region that generates radiation, a first barrier region and a second barrier region, wherein the active region is arranged between the first barrier region and the second barrier region; and at least one charge carrier barrier layer is arranged in the first barrier region, said at least one charge carrier barrier layer being tensile-strained.

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Wuppertal, Germany

Ivar Tångring