University of Illinois

US Government as Represented by the Secretary of the Army

University of California

Fei Comapny

Ivan Petrov

Todor I Donchev

Joseph E Greene

Eric Olson

Chong Wee Lim

Dongxiang Liao

Charles P Marsh

Jianguo Wen

Ryan Franks

Chan Soo Shin

Hendrik Nicolaas Slingerland

Jan Willem Bruggers

Andreas Karl Schmid

Raymond Wagner

Thomas Duden

Daniel Gall

Kenji Ohmori

Jeroen Van De Water

Johannes Van Den Oetelaar

Adriaan Huibert Dirk Ottevanger

A method for using a reusable sample-holding device for readily loading very small wet samples for observation of the samples by microscopic equipment, in particular in a vacuum environment. The method may be used with a scanning electron microscope (SEM), a transmission electron microscope (TEM), an X-ray microscope, optical microscope, and the like. For observation of the sample, the method provides a thin-membrane window etched in the center of each of two silicon wafers abutting to contain the sample in a small uniform gap formed between the windows. This gap may be adjusted by employing spacers. Alternatively, the thickness of a film established by the fluid in which the sample is incorporated determines the gap without need of a spacer. To optimize resolution each window may have a thickness on the order of 50 nm and the gap may be on the order of 50 nm.

Method of use of reusable sample holding device permitting ready loading of very small wet samples

A reusable sample-holding device for readily loading very small wet samples for observation of the samples by microscopic equipment, in particular in a vacuum environment. Embodiments may be used with a scanning electron microscope (SEM), a transmission electron microscope (TEM), an X-ray microscope, optical microscope, and the like. For observation of the sample, embodiments provide a thin-membrane window etched in the center of each of two silicon wafers abutting to contain the sample in a small uniform gap formed between the windows. This gap may be adjusted by employing spacers. Alternatively, the thickness of a film established by the fluid in which the sample is incorporated determines the gap without need of a spacer. To optimize resolution each window may have a thickness on the order of 50 nm and the gap may be on the order of 50 nm.

Reusable sample holding device permitting ready loading of very small wet samples

Described herein is an apparatus and a method for producing atom clusters based on a gas discharge within a hollow cathode. The hollow cathode includes one or more walls. The one or more walls define a sputtering chamber within the hollow cathode and include a material to be sputtered. A hollow anode is positioned at an end of the sputtering chamber, and atom clusters are formed when a gas discharge is generated between the hollow anode and the hollow cathode.

Cluster generator

A manipulator for use in e.g. a Transmission Electron Microscope (TEM) is described, said manipulator capable of rotating and translating a sample holder (). The manipulator clasps the round sample holder between two members (A,B), said members mounted on actuators (A,B). Moving the actuators in the same direction results in a translation of the sample holder, while moving the actuators in opposite directions results in a rotation of the sample holder.

Manipulator for rotating and translating a sample holder

An SiNor SiONliner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSilayer underneath the liner. The CoSilayer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSilayers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSilayer.

Epitaxial CoSi2 on MOS devices

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Method for forming an epitaxial cobalt silicide layer on MOS devices

A method for forming atomic-scale structures on a surface of a substrate on a large-scale includes creating a predetermined amount of surface vacancies on the surface of the substrate by removing an amount of atoms on the surface of the material corresponding to the predetermined amount of the surface vacancies. Once the surface vacancies have been created, atoms of a desired structure material are deposited on the surface of the substrate to enable the surface vacancies and the atoms of the structure material to interact. The interaction causes the atoms of the structure material to form the atomic-scale structures.

Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies

Growing community of inventors

Champaign, IL, United States of America

Ivan Petrov